Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shu Ichi Ishizuka"'
Autor:
Shigetoshi Sugawa, Tadahiro Ohmi, Takuya Sugawara, Yoshitsugu Tanaka, Toshio Nakanishi, Akinobu Teramoto, Shu Ichi Ishizuka, Shigemi Murakawa, Yasushi Akasaka, Masashi Takeuchi, Minoru Honda, Yoshihiro Hirota
Publikováno v:
Japanese Journal of Applied Physics. 47:5380-5384
Nitrogen profile variations were systematically studied for the plasma nitridation process of the dynamic random access memory (DRAM) gate dielectrics, using angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and their influences to the boron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a76c4d9c7f05f19169590716cc0a2f
https://doi.org/10.1143/jjap.47.5380
https://doi.org/10.1143/jjap.47.5380
Autor:
Takuya Sugawara, Shu-ichi Ishizuka, Akinobu Teramoto, Masashi Takeuchi, Toshio Nakanishi, Minoru Honda, Yasushi Akasaka, Tadahiro Ohmi, Shigemi Murakawa, Yoshihiro Hirota, Yoshitsugu Tanaka, Shigetoshi Sugawa
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c106f94d47477d515b3ad4a26d59f7
https://doi.org/10.7567/ssdm.2007.j-7-3
https://doi.org/10.7567/ssdm.2007.j-7-3
Autor:
Takeo Hattori, Akinobu Teramoto, Toshio Nakanishi, Shigetoshi Sugawa, Shigemi Murakawa, Shu Ichi Ishizuka, Tadahiro Ohmi, Tomoyuki Suwa
Publikováno v:
Japanese Journal of Applied Physics. 49:091301
Angle-resolved photoelectron spectroscopy study was performed on the depth profile of nitrogen atoms in silicon oxynitride (SiON) films formed by the plasma nitridation of silicon dioxide using low-electron-temperature microwave plasma. The depth pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2721ef67ca6558e3378bb0a44be191b0
https://doi.org/10.1143/jjap.49.091301
https://doi.org/10.1143/jjap.49.091301