Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Shu Hsuan Su"'
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 157 (2024)
The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronic
Externí odkaz:
https://doaj.org/article/b653851d16834232af1f85e9216e5a76
Autor:
Shu Hsuan Su, Cheong-Wei Chong, Jung-Chuan Lee, Yi-Chun Chen, Vyacheslav Viktorovich Marchenkov, Jung-Chun Andrew Huang
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3687 (2022)
The spin-to-charge conversion in Permalloy (Py)/Cu/Bi2Se3 is tunable by changing the Cu layer thickness. The conversion rate was studied using the spin pumping technique. The inverse Edelstein effect (IEE) length λIEE is found to increase up to ~2.7
Externí odkaz:
https://doaj.org/article/fe2a214b4dff416382899110f48e935f
Autor:
Pangihutan Gultom, Jiang-Yan Chiang, Tzu-Tai Huang, Jung-Chuan Lee, Shu-Hsuan Su, Jung-Chung Andrew Huang
Publikováno v:
Nanomaterials; Volume 13; Issue 7; Pages: 1276
Tungsten disulfide (WS2) was prepared from W metal and WO3 by ion beam sputtering and sulfurization in a different number of layers, including monolayer, bilayer, six-layer, and nine-layer. To obtain better crystallinity, the nine-layer of WS2 was al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a108260b53229dea31b2d3ae9220e747
Autor:
Alexander Pakhomov, Petr Nikolaevich Skirdkov, Ngo Trong Hai, Jong Ching Wu, Jung-Chun-Andrew Huang, Shu Hsuan Su, Alexander Igorevich Chernov, Konstantin Anatolievich Zvezdin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a94574a17419d58820883b0cdbf6e1
https://doi.org/10.2139/ssrn.4462905
https://doi.org/10.2139/ssrn.4462905
Autor:
Cheong-Wei Chong, Jung-Chun-Andrew Huang, Yi-Chun Chen, Pei-Yu Chuang, Jung-Chuan Lee, Zong Mou Lin, Ya Wen Li, Shu Hsuan Su, Cheng-Maw Cheng
Publikováno v:
ACS Applied Electronic Materials. 3:2988-2994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::562f90d734ac67c147fb4adceb5603c0
https://doi.org/10.1021/acsaelm.1c00182
https://doi.org/10.1021/acsaelm.1c00182
Autor:
Shu-Hsuan Su, Jen-Te Chang, Pei-Yu Chuang, Ming-Chieh Tsai, Yu-Wei Peng, Min Kai Lee, Cheng-Maw Cheng, Jung-Chung Andrew Huang
Publikováno v:
Nanomaterials; Volume 11; Issue 12; Pages: 3322
Nanomaterials, Vol 11, Iss 3322, p 3322 (2021)
Nanomaterials, Vol 11, Iss 3322, p 3322 (2021)
The intrinsic magnetic topological insulator MnBi2Te4 has attracted much attention due to its special magnetic and topological properties. To date, most reports have focused on bulk or flake samples. For material integration and device applications,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33db4cee724da37b8d9ef69813d8bf97
Autor:
Shu Hsuan Su, Hsin Yu Chen, Chao-Kuei Lee, Chih-Wei Luo, Shih Hsun Yu, Tay-Rong Chang, Ku Ding Tsuei, Shih-Chang Weng, Mitch M.C. Chou, Horng-Tay Jeng, Wei Chuan Chen, Pei Yu Chuang, Cheng Maw Cheng, Li-Wei Tu, Jung Chun Andrew Huang, Chien Ming Tu
Publikováno v:
ACS nano. 15(9)
Antimonene is a promising two-dimensional (2D) material that is calculated to have a significant fundamental bandgap usable for advanced applications such as field-effect transistors, photoelectric devices, and the quantum-spin Hall (QSH) state. Here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9324855b44ae2da3d7bcc544b43d2f95
https://pubmed.ncbi.nlm.nih.gov/34435764
https://pubmed.ncbi.nlm.nih.gov/34435764
Publikováno v:
Handbook of Graphene Set
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c10434c56d957024b040ee486174db
https://doi.org/10.1002/9781119468455.ch25
https://doi.org/10.1002/9781119468455.ch25
Autor:
Cheong-Wei Chong, Shu Hsuan Su, Yu-Xiang Huang, Vyacheslav Viktorovich Marchenkov, Yi-Chun Chen, Jung-Chun Andrew Huang
The enhancement of spin-to-charge conversion in Py/Cu/Bi2Se3 is achieved when increasing the Cu layer thickness up to 7nm. The conversion rate is studied using spin pumping technique. The inverse IEE length λIEE is found to increase up to ∼2.7nm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2dcbb87ab9d4321b2fae3f28695bc20
https://doi.org/10.21203/rs.3.rs-494900/v1
https://doi.org/10.21203/rs.3.rs-494900/v1
Autor:
Cheong Wei Chong, Yaw Wen Yang, Yucheng Wu, Yi-Kang Lan, Chih-Kai Yang, Ku Ding Tsuei, Wei Chuan Chen, Shu Hsuan Su, Yi Fan Chen, Shih-Chang Weng, Yen Fa Liao, Shen Lin Chang, H. L. Su, Jyh-Fu Lee, Chi Hsuan Lee, Chia Hsin Wang, Pei Yu Chuang, Cheng Maw Cheng, Yu Heng Chou, Jung-Chun Andrew Huang
Publikováno v:
RSC Advances. 8:423-428
Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67f3b4857744ce94bd7d9d59662b9f08
https://doi.org/10.1039/c7ra08995c
https://doi.org/10.1039/c7ra08995c