Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Shrinivas Shetty"'
A study of feed-forward strategies for overlay control in lithography processes using CGS technology
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In advanced lithography, controlling the overlay budget is one of the most critical requirements. For device nodes at 10nm and below, there are many process-based sources of surface displacement that contribute to the lithography overlay budget that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ddbc147cf0aa84a037b5e3d0b297de8
https://doi.org/10.1109/asmc.2015.7164427
https://doi.org/10.1109/asmc.2015.7164427
Autor:
Shrinivas Shetty, Jeffrey Hebb, David M. Owen, Jeffrey Mileham, Serguei Anikitchev, Jim McWhirter, Bischoff Paul M, David Gaines, Yun Wang, Shaoyin Chen, Van Le, Michael Shen, Joe Lee
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Recent work has shown that laser annealing may have advantages over conventional RTP for nickel silicidation formation, such as lower leakage and better device performance [1, 2]. However, there are a number of requirements that must be met by any mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81c52c85fbfb76d7c1164639fd7939c
https://doi.org/10.1109/asmc.2011.5898180
https://doi.org/10.1109/asmc.2011.5898180
Autor:
Rainer Giedigkeit, Stephan Waidmann, Inka Richter, Hartmut Prinz, Van Le, Kornelia Dittmar, David M. Owen, Jeff Hebb, Shrinivas Shetty, Yun Wang, Robert Binder, M. Weisheit
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Advanced millisecond annealing technologies are being implemented to enable scaling of silicidation of Ni for contacts. There are several aspects of the millisecond annealing process that must be optimized in order to minimize defects and improve yie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec461c87d32a3339eb17bbf436eff09a
https://doi.org/10.1109/rtp.2010.5623798
https://doi.org/10.1109/rtp.2010.5623798
Autor:
Van Le, Shrinivas Shetty, Kornelia Dittmar, Jeff Hebb, Rainer Giedigkeit, Inka Richter, M. Weisheit, Stephan Waidmann, Jeffrey Mileham, Yun Wang, Hartmut Prinz, Robert Binder, Dave Owen
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6a5ec4c0b2af9271e3835118c49f22
https://doi.org/10.1109/rtp.2010.5623800
https://doi.org/10.1109/rtp.2010.5623800
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors.
The performance improvement associated with the intentional manipulation of stresses on the transistor scale is an integral part of device fabrication at advanced technology nodes. However, comparatively little attention is given to stress management
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bb454a6fdc0e6b8959df36730bae141
https://doi.org/10.1109/rtp.2009.5373427
https://doi.org/10.1109/rtp.2009.5373427
Publikováno v:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors.
Ultra shallow junctions are increasingly important to overcome short channel effects, and sub-millisecond annealing offers the ability to control diffusion while simultaneously offering high activation levels. The ultra-fast annealing process needs t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87da2d41369eb75d89d243eaf5081430
https://doi.org/10.1109/rtp.2009.5373421
https://doi.org/10.1109/rtp.2009.5373421
Publikováno v:
2009 International Workshop on Junction Technology.
The use of strained SiGe is essential to improvement in device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e960c2e2a1d0fc6b2cb9fb15f851f0e
https://doi.org/10.1109/iwjt.2009.5166234
https://doi.org/10.1109/iwjt.2009.5166234
Publikováno v:
2009 International Workshop on Junction Technology.
Advanced technology nodes are increasingly dependent on strain engineering to achieve the performance targets. However, processes throughout device fabrication have the potential to inadvertently relax or modify the stress. The relative importance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd65ec6118a0232feab0d29889b2641
https://doi.org/10.1109/iwjt.2009.5166208
https://doi.org/10.1109/iwjt.2009.5166208