Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shrinivas J. Pandharpure"'
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 31:1920-1924
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8065be7b909e466a997a63e996bba93d
https://doi.org/10.1109/tcad.2012.2207955
https://doi.org/10.1109/tcad.2012.2207955
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
A technique for extracting Statistical Compact Model (SCM) parameters for skewed Gaussian parameters is proposed. Existing techniques handle non-Gaussian variations through non-linearity in model equations. However, hardware data on certain technolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6debfa2fb8263c7df11b230251573497
https://doi.org/10.1007/978-3-319-03002-9_51
https://doi.org/10.1007/978-3-319-03002-9_51
Autor:
Shrinivas J. Pandharpure, Theodore J. Letavic, Saurabh Sirohi, V. Subramanian, Amit A. Dikshit
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
The effect of drift region on the flicker noise in LDMOS devices in the linear and saturation regions is analyzed using measured data and device simulations. In the linear region, noise in the drift region arises from gate-drain overlap region and is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a8047b66f373badec282005efea9823
https://doi.org/10.1109/ispsd.2012.6229086
https://doi.org/10.1109/ispsd.2012.6229086