Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Shreya Kundu"'
Publikováno v:
Pharmacological Research - Modern Chinese Medicine, Vol 11, Iss , Pp 100433- (2024)
Introduction: Mushrooms have long been integral components of traditional Chinese medicine (TCM), contributing significantly to the holistic approach to health and well-being. This review presents a critical study on mushrooms' integral role in Tradi
Externí odkaz:
https://doaj.org/article/7bd76ca09e964f42be8a7dddbca8667c
Autor:
Marinela Barci, Daniele Leonelli, Xue Zhou, Xiaojie Wang, Daniele Garbin, Ganesh Jayakumar, Thomas Witters, Nathali Franchina Vergel, Shreya Kundu, Senthil Vadakupudhu Palayam, Huifang Jiao, Hao Wu, Gouri Sankar Kar
Publikováno v:
IEEE Transactions on Electron Devices. 69:6106-6112
Autor:
Shreya Kundu, Stefan Decoster, Philippe Bezard, Ankit Nalin Mehta, Harold Dekkers, Frederic Lazzarino
Publikováno v:
ACS Applied Materials & Interfaces. 14:34029-34039
Autor:
Sandeep S. Saseendran, Tangla D. Kongnyuy, Bruno Figeys, Kamal John Sundar, Jean Philippe Soulie, Danny Goosens, Shreya Kundu, Roelof Jansen, Xavier Rottenberg, Philippe Soussan
Publikováno v:
2022 IEEE Photonics Conference (IPC).
Publikováno v:
2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT).
Autor:
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Kar
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. :2200417
Autor:
S. H. Sharifi, Simon Van Beek, Shreya Kundu, Sebastien Couet, N. Jossart, Gouri Sankar Kar, Siddharth Rao
Publikováno v:
Electronics, Vol 10, Iss 2384, p 2384 (2021)
Electronics
Volume 10
Issue 19
Electronics
Volume 10
Issue 19
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) technology is considered to be the most promising nonvolatile memory (NVM) solution for high-speed and low power applications. Dual MgO-based composite free layers (FL) have driven
Autor:
D. Crotti, F. Yasin, W. Kim, N. Jossart, Sebastien Couet, S. Van Beek, Ludovic Goux, Shreya Kundu, Gouri Sankar Kar, Stefan Cosemans, S. H. Sharifi, R. Carpenter, Siddharth Rao, M. Perumkunnil, Barry O'Sullivan, Laurent Souriau
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
We present a detailed study of the impact of damage minimizing patterning schemes on the electrical performance of perpendicular STT-MRAM devices at array level, compatible with 22 nm CMOS technology node. By employing a novel patterning scheme invol
Autor:
S. H. Sharifi, Stefan Cosemans, R. Carpenter, D. Crotti, Shreya Kundu, N. Jossart, Sebastien Couet, Barry O'Sullivan, Farukh Yasin, Siddharth Rao, Woojin Kim, Simon Van Beek, Gouri Sankar Kar
Publikováno v:
IRPS
To enable high density STT-MRAM, process-induced damage needs to be minimized. High temperature anneals and patterning can degrade performance and reliability. By employing a novel patterning scheme, involving physical ion beam etch, etchback and oxi