Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shreeram V. Deshpande"'
Autor:
Shreeram V. Deshpande
Publikováno v:
Injury. 36:1067-1074
Casting materials are commonly used in a trauma and post-operative setting in orthopaedic practice. Swelling after trauma or surgery is universal, hence, the importance of understanding the pressure-volume dynamics of various materials commonly used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b70ec64dec52b9fa7430c0e6aedd33bb
https://doi.org/10.1016/j.injury.2005.02.003
https://doi.org/10.1016/j.injury.2005.02.003
Publikováno v:
SPIE Proceedings.
Flash memory chips are playing a critical role in semiconductor devices due to increased popularity of hand held electronic communication devices such as cell phones and PDAs (personal Digital Assistants). Flash memory offers two primary advantages i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab18df783eac99b2298e1d5ece010d6e
https://doi.org/10.1117/12.436919
https://doi.org/10.1117/12.436919
Publikováno v:
SPIE Proceedings.
Plasma (dry) etching is a key step in semiconductor device manufacturing processes whereby the resist pattern is transferred to a substrate. As the resist thickness is reduced to meet stringent transparency requirements in photolithography, the usage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be81ecd3816bf3cb4120c90f97edabd
https://doi.org/10.1117/12.436819
https://doi.org/10.1117/12.436819
Publikováno v:
SPIE Proceedings.
This paper describes the development of a new conformal i- line BARC. With the advent of flash memory deices the topography can be greater than 0.5 micrometers . Maintaining CD control through the BARC etch step over such a high topography can be a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66af1a4aa6fd1aa100245675d750d831
https://doi.org/10.1117/12.425227
https://doi.org/10.1117/12.425227
Autor:
Shreeram V. Deshpande, William J. Simmons, Joe Johnson, James E. Lamb, Nickolas L. Brakensiek, Xiaoming Wu, Xie Shao, Gu Xu
Publikováno v:
SPIE Proceedings.
Dual Damascene (DD) process has been implemented in manufacturing semiconductor devices with smaller feature sizes (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66cb1c02d9905ac9f786d1c17f3c55d5
https://doi.org/10.1117/12.386539
https://doi.org/10.1117/12.386539