Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Shozo Shikama"'
Autor:
Shozo Shikama, Naoki Yutani, Yoshinori Matsuno, Ken Ichi Ohtsuka, Kenichi Kuroda, Hiroaki Sumitani
Publikováno v:
Materials Science Forum. :979-982
The forward current density-voltage (JF-VF) characteristics of SiC Schottky barrier diodes (SBDs) with an epilayer thickness between 9.6 and 10 μm and donor concentration (ND) ranging from 4.0x1015 to 5.7x1015 cm-3 was evaluated. It was found that t
Publikováno v:
Journal of Applied Physics. 76:1977-1979
Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevati
Publikováno v:
Japanese Journal of Applied Physics. 34:L551
Capacitance-voltage (\cv) and electron-beam-induced current (EBIC) measurements were performed on metal-insulator-semiconductive (MIS) diamond structures. Utilizing \bto (BTO) as the gate insulator of diamond MIS structures, experimental results indi
Publikováno v:
Japanese Journal of Applied Physics. 33:L888
Metal-insulator-semiconductor (MIS) structures of heavily doped ( 6–7×1018 cm-3) epitaxial diamond were prepared, which include highly polarizable BaTiO3 insulator films. They were characterized by capacitance-voltage ( C-V) and electron-beam-indu
Publikováno v:
Japanese Journal of Applied Physics. 32:L1588
The depth profiles of activated boron concentration N B in the Al/p+-diamond Schottky diodes were systematically investigated from the junction capacitance-voltage (C-V) curves. The observed 1/C 2 vs V plot did not fall on straight lines, indicating
Publikováno v:
Japanese Journal of Applied Physics; November 1993, Vol. 32 Issue: 11 pL1588-L1588, 1p