Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Shovkun, D."'
Autor:
Piatrusha, S. U., Ginzburg, L. V., Tikhonov, E. S., Shovkun, D. V., Koblmueller, G., Bubis, A. V., Grebenko, A. K., Nasibulin, A. G., Khrapai, V. S.
Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as spurious contribution which is to be eliminated via time-averaging or,
Externí odkaz:
http://arxiv.org/abs/1806.02200
Autor:
Tikhonov, E. S., Shovkun, D. V., Ercolani, D., Rossella, F., Rocci, M., Sorba, L., Roddaro, S., Khrapai, V. S.
Publikováno v:
Scientific Reports 6, Article number: 30621 (2016)
The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various
Externí odkaz:
http://arxiv.org/abs/1604.07372
Autor:
Tikhonov, E. S., Shovkun, D. V., Khrapai, V. S., Snelder, M., Stehno, M. P., Brinkman, A., Huang, Y., Golden, M. S., Golubov, A. A.
Publikováno v:
Phys. Rev. Lett. 117, 147001 (2016)
We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffus
Externí odkaz:
http://arxiv.org/abs/1604.00164
Autor:
Tikhonov, E. S., Shovkun, D. V., Khrapai, V. S., Ercolani, D., Rossella, F., Rocci, M., Sorba, L., Roddaro, S.
Publikováno v:
Semicond. Sci. Technol. 31 104001 (2016)
We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon inte
Externí odkaz:
http://arxiv.org/abs/1602.08851
Autor:
Tikhonov, E. S., Shovkun, D. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., Khrapai, V. S.
Publikováno v:
Pis'ma v ZhETF, vol. 101, issue 10, page 787 (2015)
We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temp
Externí odkaz:
http://arxiv.org/abs/1502.06890
Publikováno v:
Physical Review B 90, 161405(R) (2014)
We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperatur
Externí odkaz:
http://arxiv.org/abs/1406.2481
Publikováno v:
Pisma v ZhETF 98 (2), 131 (2013)
We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hopping (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian val
Externí odkaz:
http://arxiv.org/abs/1302.5185
Autor:
Khrapai, V. S., Shovkun, D. V.
Publikováno v:
Pis'ma v ZhETF vol. 92, iss. 7, pp. 507-512 (2010)
We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the partition n
Externí odkaz:
http://arxiv.org/abs/1008.4891
Autor:
Bonsignore, G., Vigni, A. Agliolo Gallitto M. Li, Luo, J. L., Chen, G. F., Wang, N. L., Shovkun, D. V.
Publikováno v:
J. Low. Temp. Phys. 162 (2011) pp. 40-51
The AC susceptibility at zero DC magnetic field of a polycrystalline sample of LaFeAsO_{0.94}F_{0.06} (T_c = 24 K) has been investigated as a function of the temperature, the amplitude of the AC magnetic field (in the range Hac = 0.003 - 4 Oe) and th
Externí odkaz:
http://arxiv.org/abs/1005.3965
Autor:
Tsydynzhapov, G. E., Shevchun, A. F., Trunin, M. R., Zverev, V. N., Shovkun, D. V., Barkovskiy, N. V., Klinkova, L. A.
Publikováno v:
In Russian: Pis'ma v ZhETF 83, 473 (2006) [English translation: JETP Letters, 83, 405 (2006)]
A study of temperature dependences of the upper critical field B_{c2}(T) and surface impedance Z(T)=R(T)+iX(T) in Ba_{1-x}K_xBiO_3 single crystals that have transition temperatures in the range 6 < T_c < 32 K (roughly 0.6>x>0.4) reveals a transition
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606355