Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shoval Zoran"'
Publikováno v:
IEEE Transactions on Plasma Science. 51:1133-1137
Publikováno v:
IEEE Transactions on Plasma Science. 44:2424-2428
Drift-step-recovery diodes (DSRDs) are fast-opening switches capable of delivering nanosecond-scale high-voltage (HV) pulses into a load. The HV capability is achieved by stacking DSRD dies in series. In this paper, we characterize a DSRD die based o
Autor:
David Eger, A. Raizman, Shoval Zoran, Inbar Shafir, Yossi Rosenwaks, Ariel Sher, Yaakov Sharabani
Publikováno v:
IEEE Electron Device Letters. 37:1041-1044
The fast current interruption property of drift step recovery diodes (DSRDs) is utilized in high-voltage fast switches. Previously, using a physical device simulator, we have conducted a theoretical investigation of this mechanism in a $\text{p}^{+}\
Autor:
D. Cohen-Elias, A. Raizman, Amit S. Kesar, S. Gleizer, Shoval Zoran, Yakov E. Krasik, Gil Atar
Publikováno v:
Applied Physics Letters. 117:013501
A silicon-avalanche shaper/sharpener is a fast-closing semiconductor switch. For positive voltages, it is activated by a high-voltage pulse at its cathode, and, when turned on, the current through the device rises rapidly. Using Synopsys TCAD softwar
Autor:
Kesar, Amit S., Raizman, Arie, Atar, Gil, Zoran, Shoval, Gleizer, Svetlana, Krasik, Yakov, Cohen-Elias, Doron
Publikováno v:
Applied Physics Letters; 7/6/2020, Vol. 117 Issue 1, p1-5, 5p, 1 Diagram, 4 Graphs
Publikováno v:
IEEE Transactions on Plasma Science; Oct2016 Part 2, Vol. 44 Issue 10, Part 2, p2424-2428, 5p
Autor:
Sharabani, Yaakov, Shafir, Inbar, Zoran, Shoval, Raizman, Arie, Sher, Ariel, Rosenwaks, Yossi, Eger, David
Publikováno v:
IEEE Electron Device Letters; Aug2016, Vol. 37 Issue 8, p1041-1044, 4p