Zobrazeno 1 - 3
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pro vyhledávání: '"Shouzhuo Yang"'
Autor:
Ayse Sünbül, David Lehninger, Amir Pourjafar, Shouzhuo Yang, Franz Müller, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Lukas Eng, Maximilian Lederer
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 8, Iss , Pp 100110- (2024)
Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. F
Externí odkaz:
https://doaj.org/article/3da524e3dde2434daa619abd935873e2
Publikováno v:
2018 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (Wow).
Efficiency is an important index for high power wireless power transfer system. Combined with the characteristic that the normal traction demand of the modern tram can be satisfied when the input DC voltage of the traction inverter is in a certain ra
Autor:
Xiaoqiang Sun, Daming Zhang, Yunji Yi, Xu Fei, Yang Zheng, Shouzhuo Yang, Xibin Wang, Fei Wang, Changming Chen, Jihou Wang, Yunlong Gu
Publikováno v:
RSC Advances. 6:3224-3230
In this study, a metal-cladding directly defined active waveguide technique is proposed. Optical waveguide amplifiers and thermo-optic (TO) waveguide switches based on erbium-containing polymer are designed and fabricated using this technique. The Er