Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Shouzhi Xi"'
Autor:
Yingrui Li, Gangqiang Zha, Dengke Wei, Fan Yang, Jiangpeng Dong, Shouzhi Xi, Lingyan Xu, Wanqi Jie
Publikováno v:
Sensors, Vol 20, Iss 7, p 2032 (2020)
The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not ye
Externí odkaz:
https://doaj.org/article/90f2e943068a4efa86fbb917195ff567
Publikováno v:
Sensors, Vol 20, Iss 2, p 383 (2020)
Counting rate is an important factor for CdZnTe photon counting detectors as high-flux devices. Until recently, there has been a lack of knowledge on the relationship between X-ray photocurrent response and the photon counting performance of CdZnTe d
Externí odkaz:
https://doaj.org/article/f068d512c65f478a9216d4c019a1f29e
Autor:
Boru Zhou, Wanqi Jie, Tao Wang, Zongde Kou, Dou Zhao, Liying Yin, Fan Yang, Shouzhi Xi, Gangqiang Zha, Ziang Yin
Publikováno v:
Crystals, Vol 8, Iss 1, p 26 (2018)
Te precipitates in CdZnTe (CZT) crystals grown by the traveling heater method (THM) are investigated using high-resolution transmission electron microscopy (HRTEM). The results show that in THM-grown CZT crystals, Te precipitates are less than 10 nm
Externí odkaz:
https://doaj.org/article/bf2599d5e0f24e6189e7cbe67f0a3502
Autor:
Fangbao Wang, Ruichen Bai, Qihao Sun, Xin Liu, Yuanbo Cheng, Shouzhi Xi, Binbin Zhang, Menghua Zhu, Shuqing Jiang, Wanqi Jie, Yadong Xu
Publikováno v:
Chemistry of Materials. 34:3993-4000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6e4e680adae9db5ce653adfbe590e6c
https://doi.org/10.1021/acs.chemmater.2c00071
https://doi.org/10.1021/acs.chemmater.2c00071
Autor:
Bao Xiao, Qihao Sun, Shiyao Wang, Leilei Ji, Yingrui Li, Shouzhi Xi, Bin-Bin Zhang, Junjie Wang, Wanqi Jie, Yadong Xu
Publikováno v:
The Journal of Physical Chemistry Letters. 13:1187-1193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce48aa97074eed813880a58f9be3dcdb
https://doi.org/10.1021/acs.jpclett.1c04204
https://doi.org/10.1021/acs.jpclett.1c04204
Autor:
Ruichen Bai, Bao Xiao, Fangpei Li, Xin Liu, Shouzhi Xi, Menghua Zhu, Wanqi Jie, Bin-Bin Zhang, Yadong Xu
Publikováno v:
CrystEngComm. 24:1094-1099
Three typical AVBVICVII single crystals with a one-dimensional crystal structure are grown by the physical vapor transport method.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a57648d35e566f08f960045f5593a46b
https://doi.org/10.1039/d1ce01602d
https://doi.org/10.1039/d1ce01602d
Autor:
Xin Zhang, Fangpei Li, Ruichen Bai, Qihao Sun, Yingying Hao, Shouzhi Xi, Menghua Zhu, Shuqing Jiang, Wanqi Jie, Yadong Xu
Publikováno v:
Journal of Materials Chemistry C. 10:6017-6024
The calculations reveal the carrier transport of CsPbBr3 detectors to obtain optimal resolution, and furthermore a high energy resolution of 11.47% is obtained by tailoring the electrode structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b922f59868e022bbd2266fa6c939a0f
https://doi.org/10.1039/d2tc00566b
https://doi.org/10.1039/d2tc00566b
Publikováno v:
Journal of Electronic Materials. 49:1243-1248
CdZnTe (CZT) ingots doped with different concentrations of indium (2 ppm, 5 ppm, 8 ppm, and 11 ppm) were grown by the Vertical Bridgman Method. The charge transport behaviors of CZT wafers were characterized by Thermally Stimulated Current (TSC), Tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b99c68af50a3e4b0b2a5117bf5b84f07
https://doi.org/10.1007/s11664-019-07663-z
https://doi.org/10.1007/s11664-019-07663-z
Autor:
Fan Yang, Jiangpeng Dong, Gangqiang Zha, Dengke Wei, Lingyan Xu, Shouzhi Xi, Wanqi Jie, Yingrui Li
Publikováno v:
Sensors
Volume 20
Issue 7
Sensors (Basel, Switzerland)
Sensors, Vol 20, Iss 2032, p 2032 (2020)
Volume 20
Issue 7
Sensors (Basel, Switzerland)
Sensors, Vol 20, Iss 2032, p 2032 (2020)
The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device&rsquo
s performance a
s performance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb64582f8ecf1168d9e786ab172aa408
Publikováno v:
Sensors
Volume 20
Issue 2
Sensors, Vol 20, Iss 2, p 383 (2020)
Sensors (Basel, Switzerland)
Volume 20
Issue 2
Sensors, Vol 20, Iss 2, p 383 (2020)
Sensors (Basel, Switzerland)
Counting rate is an important factor for CdZnTe photon counting detectors as high-flux devices. Until recently, there has been a lack of knowledge on the relationship between X-ray photocurrent response and the photon counting performance of CdZnTe d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6589e1c65b28c1f18369be3fc589dda