Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shouqiang Lai"'
Autor:
Tingwei Lu, Yue Lin, Tianqi Zhang, Yue Huang, Xiaotong Fan, Shouqiang Lai, Yijun Lu, Hao-Chung Kuo, Zhong Chen, Tingzhu Wu, Rong Zhang
Publikováno v:
Opto-Electronic Advances, Vol 7, Iss 3, Pp 1-15 (2024)
In backlighting systems for liquid crystal displays, conventional red, green, and blue (RGB) light sources that lack polarization properties can result in a significant optical loss of up to 50% when passing through a polarizer. To address this ineff
Externí odkaz:
https://doaj.org/article/ac0f529d24e7472f9b9c0fcec8236ef7
Autor:
Shouqiang Lai, Shibiao Liu, Zilu Li, Zhening Zhang, Zhong Chen, Rong Zhang, Hao-Chung Kuo, Tingzhu Wu
Publikováno v:
Opto-Electronic Science, Vol 2, Iss 10, Pp 1-21 (2024)
Micro-light-emitting diodes (micro-LEDs) with outstanding performance are promising candidates for next-generation displays. To achieve the application of high-resolution displays such as meta-displays, virtual reality, and wearable electronics, the
Externí odkaz:
https://doaj.org/article/8c23c414c15f4a06b9e9155dad53fed4
Publikováno v:
Opto-Electronic Advances, Vol 6, Iss 9, Pp 1-3 (2023)
Deep-ultraviolet (DUV) sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability, eco-friendliness, high potency, and broad-spectrum sterilization. This study compiles the developments of recent DUV sterili
Externí odkaz:
https://doaj.org/article/cd5e67bdcd0242b483cfdf13ca509585
Autor:
Lili Zheng, Ziquan Guo, Yijun Lu, Peixin Zeng, Shouqiang Lai, Guolong Chen, Yulin Gao, Lihong Zhu, Weijie Guo, Yi Lin, Zhong Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 827-832 (2022)
In this article, we experimentally and quantitatively investigate the luminance attenuation for red, green, and blue mini light-emitting diodes (LEDs), and the optical crosstalk in the RGB mini-LED array under different working currents via the micro
Externí odkaz:
https://doaj.org/article/b95863879e7742109feb1bd1731d6426
Autor:
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021)
Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor dep
Externí odkaz:
https://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab2
Autor:
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/3f43e75c55ef4f4f802f798e5208836a
Autor:
Shouqiang Lai, Chaohsu Lai, Saijun Li, Guolong Chen, Xi Zheng, Tingwei Lu, Zongming Lin, Rongxing Wu, Yijun Lu, Hao-Chung Kuo, Zhong Chen, Tingzhu Wu
Publikováno v:
IEEE Electron Device Letters. 44:907-910
Autor:
Ziquan Guo, Zhihui Li, Shouqiang Lai, Xiaoyang Hou, Xiaotong Fan, Chenming Zhong, Yue Lin, Guolong Chen, Guoheng Qin, Tao Gao, Nuoyi Fu, Yuan Shi, Xinqin Liao, Yi Lin, Yijun Lu, Weijie Guo, Zhong Chen
Publikováno v:
Nanotechnology.
The temperature-dependent external quantum efficiency (EQE) droops of 265 nm, 275 nm, 280 nm, and 285 nm AlGaN-based ultraviolet-c light-emitting diodes (UVC-LEDs) differed in Al contents have been comprehensively investigated. The modified ABC model
Autor:
Zijun Yan, Fangshun Ye, Liyue Xu, Xiao Yang, Shouqiang Lai, Shuli Wang, Yue Lin, Guolong Chen, Yijun Lu, Hao-Chung Kuo, Zhong Chen, Tingzhu Wu
Publikováno v:
Journal of Luminescence. 261:119905
Autor:
Po-Tsung Lee, Tingzhu Wu, Guisen Li, Shouqiang Lai, Shui-Yang Lien, Su-Hui Lin, Yen-Wei Yeh, Hao-Chung Kuo, Tsung-Chi Hsu, Zhong Chen, Dong-Sing Wuu
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021)
Nanoscale Research Letters
Nanoscale Research Letters
In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition c