Zobrazeno 1 - 5
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pro vyhledávání: '"Shouichiro Izumi"'
Publikováno v:
physica status solidi (a). 213:1170-1176
We have achieved continuous-wave (CW) operation of gallium nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs) fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors (DBRs) as masks for selecti
Publikováno v:
SPIE Proceedings.
We have succeeded in achieving continuous-wave operation of gallium nitride (GaN) based vertical-cavity surfaceemitting lasers (VCSELs), which was fabricated by epitaxial lateral overgrowth (ELO) using dielectric distributed Bragg reflectors(DBRs) as
Autor:
Masahiro Murayama, Tatsushi Hamaguchi, Noriyuki Fuutagawa, Hironobu Narui, Masaru Kuramoto, Shouichiro Izumi
Publikováno v:
Applied Physics Express. 8:062702
We have successfully demonstrated the room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors, which were fabricated using epitaxial lateral overgrowth. The VCSELs exhibi
Autor:
Atsushi A. Yamaguchi, Kenji Ishikawa, Shigetaka Tomiya, Tetsuya Tatsumi, Masaki Minami, Michiru Kamada, Masaru Hori, Shouichiro Izumi
Publikováno v:
Japanese Journal of Applied Physics. 52:08JL09
Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-reso
Autor:
Shouichiro Izumi, Noriyuki Fuutagawa, Tatsushi Hamaguchi, Masahiro Murayama, Masaru Kuramoto, Hironobu Narui
Publikováno v:
Applied Physics Express; Jun2015, Vol. 8 Issue 6, p1-1, 1p