Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Shou-ichi Uchino"'
Autor:
Shou-ichi Uchino, Kaori Kimura
Publikováno v:
Journal of Photopolymer Science and Technology. 12:359-364
New negative electron-beam (EB) resists based on ring-chain tautomerism of benzoic acid derivatives have been developed. o-Acetylbenzoic acid (ABA), which converts into the ring-tautomer through a hydrogen transfer from the carboxyl group to the carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea2a355f16164a1afc30febbedf0381
https://doi.org/10.2494/photopolymer.12.359
https://doi.org/10.2494/photopolymer.12.359
Autor:
Sonoko Migitaka, Michiaki Hashimoto, Fumio Murai, Kyoko Kojima, Hiroshi Shiraishi, Shou-ichi Uchino, Jiro Yamamoto
Publikováno v:
Journal of Photopolymer Science and Technology. 11:555-563
Negative electron beam resists composed of a phenylcarbinol, poly(4-hydroxystyrene) (PHS), and an onium salt have been developed to define patterns below 100-nm. Five phenylcarbinols were evaluated as a precursor of a dissolution inhibitor (PDI) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2b75389ad091e9287c3a4949912a3ab
https://doi.org/10.2494/photopolymer.11.555
https://doi.org/10.2494/photopolymer.11.555
Autor:
Toshio Sakamizu, Tadasi Arai, Yasunori Suzuki, Kohji Katoh, Shou-ichi Uchino, Fumio Murai, Hiroshi Shiraishi
Publikováno v:
Journal of Photopolymer Science and Technology. 11:547-552
The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53ded3dfe13530b8c2f05d1fc3ac660
https://doi.org/10.2494/photopolymer.11.547
https://doi.org/10.2494/photopolymer.11.547
Autor:
Shinji Okazaki, Hiroshi Shiraishi, Jiro Yamamoto, Fumio Mural, Shou-ichi Uchino, Tsuneo Terasawa, Toshiyuki Yoshimura
Publikováno v:
Journal of Photopolymer Science and Technology. 10:629-634
We describe how molecular-weight distributions of resist polymers and process control affect lithography for 0.1μm and below, especially for negative-type resists. There are two main issues for precise critical dimension (CD) control and high resolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb954e24641eaa2b75fdb5e7079ca977
https://doi.org/10.2494/photopolymer.10.629
https://doi.org/10.2494/photopolymer.10.629
Publikováno v:
Chemistry of Materials. 8:2433-2438
A series of phenylcarbinols have been evaluated as components of chemically amplified resists used for KrF excimer laser lithography. The character of the carbon atom to which the hydroxyl group is...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d334f867c36a40766483b3b94dc1f70
https://doi.org/10.1021/cm960133c
https://doi.org/10.1021/cm960133c
Autor:
Hiroshi Shiraishi, Takumi Ueno, Michiaki Hashimoto, Sonoko Migitaka, Shou-ichi Uchino, Jiro Yamamoto, Kyoko Kojima
Publikováno v:
Journal of Photopolymer Science and Technology. 9:685-691
Chemically amplified negative resists made by utilizing the polarity-change reaction of phenylcarbinol were investigated for electron beam lithography. The resist composed of 1, 3-bis(α-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d16d9d70634ce98e8f7ee9a48649ae6d
https://doi.org/10.2494/photopolymer.9.685
https://doi.org/10.2494/photopolymer.9.685
Publikováno v:
Journal of Photopolymer Science and Technology. 7:397-405
The technologies for future lithography have been proposed, such as i-line phase-shifting lithography, deep-UV lithography and electron beam lithography. We have proposed several types of chemical amplification resist systems for future lithography.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52d954a7a8010782507aa464f08a700
https://doi.org/10.2494/photopolymer.7.397
https://doi.org/10.2494/photopolymer.7.397
Publikováno v:
Microelectronic Engineering. 18:341-351
An acid-catalyzed etherification of carbinol has been used in the design of an alkali developable, highly sensitive negative resist. The resist consists of diphenylcarbinol (DPC), an acid generator, and a novolak resin shows the best lithographic per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e5a773e717cbea5b4e659c4c6f1e75
https://doi.org/10.1016/0167-9317(92)90134-d
https://doi.org/10.1016/0167-9317(92)90134-d
Autor:
Curtis W. Frank, Shou-ichi Uchino
Publikováno v:
Polymer Engineering and Science. 32:1530-1534
Insolubilization mechanisms of chemically amplified resist systems using the pinacol rearrangement reaction have been investigated. An acid catalyzed dehydration of hydrobenzoin (HB) in a phenolic resin matrix proceeds by a consecutive reaction. HB c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::473b7868c0d96a11c548e041e2e081d9
https://doi.org/10.1002/pen.760322015
https://doi.org/10.1002/pen.760322015
Publikováno v:
Journal of Photopolymer Science and Technology. 5:93-99
A photosensitive material called MRI consisting of an aromatic azide (4, 4′-diazido-3, 3′-dimethoxybiphenyl) and a novolak resin has been prepared and evaluated as a negative resist for i-line phase-shifting lithography. Due to the high transpare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::894db03b54beb9faa73bf8d01605d3c6
https://doi.org/10.2494/photopolymer.5.93
https://doi.org/10.2494/photopolymer.5.93