Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Shou-Kong Fan"'
Publikováno v:
Micromachines, Vol 13, Iss 11, p 1861 (2022)
The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant
Externí odkaz:
https://doaj.org/article/b63142faad8841b1a7723847310f405b
Autor:
Mu-Chun Wang, Shun-Ping Sung, Heng-Sheng Huang, Shou-Kong Fan, Shuang-Yuan Chen, Shea-Jue Wang
Publikováno v:
Vacuum. 153:117-121
Exposing the feasible nitrogen concentration and annealing temperatures with decoupled plasma nitridation (DPN) treatment to the high-k dielectric after deposition as gate dielectric is impressive to raise the high-k value and against the gate leakag
Publikováno v:
IEEE Transactions on Electron Devices. 48:2317-2322
This paper presents a quite comprehensive procedure covering both the stress-induced leakage current (SILC) and oxide breakdown, achieved by balancing systematically the modeling and experimental works. The underlying model as quoted in the literatur
Autor:
Chung-Ming Chu, Yu-Min Chung, Mu-Chun Wang, Chiao-Lo Chiang, I-Shan Yen, Chin-Chia Kuo, Shou-Kong Fan
Publikováno v:
2010 International Symposium on Next Generation Electronics.
Early-life failure-rate (ELFR) test is a useful gauge to screen out the harmful or latent-defect memory products. In nano-regime, this test is still suitable to be applied on these kinds of memory products. Through this reliability test, some gap-fil
Autor:
Kuo-Shu Huang, Hsiang-Lin Yang, Mu-Chun Wang, Shuang-Yuan Chen, Zhen-Ying Hsieh, Shou-Kong Fan
Publikováno v:
2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference.
The molding technology in IC assembly is to protect the ICs avoiding the external damage and indirectly provide the heat dissipation. The molding pattern design, transfer-mold system, providing the drawing pipeline for liquid molding compound in mold
Publikováno v:
2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference.
In the infant mortality (IM) experiment and the final test (FT) of IC reliability, the screening capability for the contaminated metal particles is generally over than the size, W × L ∼ 120 × 120 um2. For the smaller size of these metal particles
Publikováno v:
1993 IEEE MTT-S International Microwave Symposium Digest.
The large-signal performance of GaInP/GaAs HBTs (heterojunction bipolar transistors) at X-band is reported on. A CW (continuous wave) output power of 1.0 W is obtained from a GaInP/GaAs HBT consisting of ten 2- mu m*30- mu m emitter fingers, correspo
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
An internally matched HBT has been developed for use in communications systems. An output power of 20 W with 6.5 dB gain and 40% PAE at 7.5 GHz was achieved. Over the 7.25 to 7.75 GHz band minimum output power was 16.5 W with minimum 38% PAE. Two ton
Autor:
Chiao-Lo Chiang, Mu-Chun Wang, Yu-Min Chung, Chung-Ming Chu, Shou-Kong Fan, Chin-Chia Kuo, I-Shan Yen
Publikováno v:
2010 International Symposium on Next-Generation Electronics (ISNE); 2010, p250-253, 4p
Autor:
Mu-Chun Wang, Kuo-Shu Huang, Zhen-Ying Hsieh, Hsiang-Lin Yang, Shuang-Yuan Chen, Shou-Kong Fan
Publikováno v:
2009 4th International Microsystems, Packaging, Assembly & Circuits Technology Conference; 2009, p652-655, 4p