Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Shou-Ji Chen"'
Autor:
Chang-Hsien Lin, Chi-Ming Wu, Jie-Yi Yao, Chien-Ting Wu, Chi-Hui Yang, Shih Hsiung Wu, Bo-Yuan Chen, Qiong-Zi Hsu, Yi-Ying Ho, Mei Ling Kuo, Cheng-San Wu, Cho-Lun Hsu, Fu-Liang Yang, Yi-Ling Shen, A. Liu, Chenming Hu, Tong-Huan Chou, Dong-Yen Lai, ChiaHua Ho, Chun-Chi Chen, Min-Cheng Chen, Yu-Sheng Lai, Fu-Kuo Hsueh, Chia-Yi Lin, Hung-Min Chen, Chuan Feng Shih, Wen-Cheng Chiu, Wen-Fa Wu, Kun-Lin Lin, Szu-Hung Chen, Shou-Ji Chen, Kent Liu, Mei-Yi Lee, Ching-Tai Hsu
Publikováno v:
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
This is the first report of 0 eV or negative Schottky barrier height for electrons down to 100 K, even on lightly doped Si. It is achieved by energy barrier engineering with Yb doping at NiSi/Si interface. Ideal unity rectification ratio and reasonab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a780770d9d68ae6aaf0c4578ca54f206
https://doi.org/10.1109/vlsi-tsa.2013.6545608
https://doi.org/10.1109/vlsi-tsa.2013.6545608
Autor:
Szu-Hung Chen, Min-Cheng Chen, Hung-Min Chen, Chuan-Feng Shih, Shih-Hsiung Wu, Yi-Ying Ho, Yu-Sheng Lai, Shou-Ji Chen, Kent Liu, Bo-Yuan Chen, Dong-Yen Lai, Chang-Hsien Lin, Chia-Yi Lin, Fu-Kuo Hsueh, Chi-Ming Wu, Cho-Lun Hsu, Wen-Cheng Chiu, Chun-Chi Chen, Liu, Andy, Ching-Tai Hsu
Publikováno v:
2013 International Symposium on VLSI Technology, Systems & Application (VLSI-TSA); 2013, p1-2, 2p