Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Shou Hsien Weng"'
Publikováno v:
IEEE Microwave and Wireless Components Letters. 26:449-451
A broadband GaAs bidirectional distributed amplifier (BDA) designed using $G_{m}$ -bandwidth ( $G_{m}$ -BW) extension technique is presented in this letter. A $G_{m}$ -BW extension configuration is investigated, and utilized in the gain stage of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9706b1c6992c31874b89116d261d61ab
https://doi.org/10.1109/lmwc.2016.2562104
https://doi.org/10.1109/lmwc.2016.2562104
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 62:610-622
A Ka-band monolithic bidirectional distributed amplifier (BDA) with a quadrature phase-shift keying modulator/demodulator for high-speed applications is presented in this paper. A modified BDA topology is proposed to improve the isolation between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8ac08d895fb9fe8886d7edfbb62453
https://doi.org/10.1109/tmtt.2014.2302734
https://doi.org/10.1109/tmtt.2014.2302734
Autor:
Chih-Chun Shen, Guan-Yu Chen, Yen-Liang Yeh, Shou-Hsien Weng, Hong-Yeh Chang, Yu-Chi Wang, Yue-Ming Hsin, Jia-Shiang Fu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:3674-3689
A Ka-band monolithic high-efficiency frequency quadrupler using a GaAs heterojunction bipolar transistor and pseudomorphic high electron-mobility transistor technology is presented in this paper. The frequency quadrupler is constructed cascading two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e647ffbe58c270d568e559384521a2
https://doi.org/10.1109/tmtt.2013.2277991
https://doi.org/10.1109/tmtt.2013.2277991
Publikováno v:
2016 Asia-Pacific Microwave Conference (APMC).
A compact DC-to-82.4-GHz amplifier using 0.15 µm pHEMT process is demonstrated in this paper. The amplifier is implemented in common-source (CS) configuration with bandwidth extension technique. The frequency response and input and output impedances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c869b03dbc5bbf6c6b0004ce4f168cd
https://doi.org/10.1109/apmc.2016.7931372
https://doi.org/10.1109/apmc.2016.7931372
Publikováno v:
2016 11th European Microwave Integrated Circuits Conference (EuMIC).
In this paper, a F-band 90 nm CMOS frequency doubler using active CS-based Gm-boosted technique is proposed. When the Gm-boosted technique is applied to the frequency doubler design, the input driving power reduces due to the boosted input voltage sw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f0164749dd1b666e5a6c08476aacdfe
https://doi.org/10.1109/eumic.2016.7777575
https://doi.org/10.1109/eumic.2016.7777575
Autor:
Shou Ting Jian, V. Tapia, Shin'ichiro Asayama, Chin Ting Ho, Chien Feng Lee, John Effland, Ching Tang Liu, Doug Henke, Marian Pospieszalski, Oscar Morata, Alvaro Gonzalez, Shou Hsien Weng, Keith Yeung, Nicolas Reyes, Chih Cheng Chang, Paul T. P. Ho, Yuh-Jing Hwang, Ciska Kemper, Patrick M. Koch, Chi Den Huang, Po Han Chiang, Fang Chia Hsieh, Chau-Ching Chiong, Daisuke Iono, Yau De Huang, Hsiao-Ling Wu, Yi Wei Lee, You-Hua Chu, Kamaljeet Saini, Satoru Iguchi, Yen Hsiang Tseng, Ricardo Finger
Publikováno v:
SPIE Proceedings.
The Atacama Large Millimeter/submillimeter Array(ALMA) Band 1 receiver covers the 35-50 GHz frequency band. Development of prototype receivers, including the key components and subsystems has been completed and two sets of prototype receivers were fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5ae5c742a8d7187d5722aac304daa39
https://doi.org/10.1117/12.2232193
https://doi.org/10.1117/12.2232193
A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 µm SiGe process
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 µm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37967875354ea93866c50c2f3e9bf69d
https://doi.org/10.1109/mwsym.2016.7540371
https://doi.org/10.1109/mwsym.2016.7540371
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:3458-3473
Broadband Darlington amplifiers using a GaAs heterojunction bipolar transistor (HBT) high electron-mobility transistor (HEMT) process are reported in this paper. The gain-bandwidth analysis of the Darlington amplifiers using HEMT-HBT, HBT-HEMT, HEMT-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86e64bc6a7a612afb45c52a920b94e4f
https://doi.org/10.1109/tmtt.2012.2215051
https://doi.org/10.1109/tmtt.2012.2215051
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 59:443-455
Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea302c4eaea9752f0ddda5d1f659af18
https://doi.org/10.1109/tmtt.2010.2092786
https://doi.org/10.1109/tmtt.2010.2092786
Publikováno v:
Electronics Letters. 50:812-814
A 10.2-12.6 GHz balanced heterojunction bipolar transistor (HBT)-high electron mobility transistor (HEMT) frequency tripler is presented. A pair of common-base/common-emitter HBTs is used to generate in-phase and out-of-phase harmonics. Two bandpass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b87d380a99580aa0e0b3bfae17a1d67a
https://doi.org/10.1049/el.2014.0678
https://doi.org/10.1049/el.2014.0678