Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shou Chien Huang"'
Publikováno v:
Applied Mechanics and Materials. 533:397-400
To modify the power factor and balance the three-phase currents simultaneously, this paper proposes the instantaneous compensator to calculate the compensation current. The instantaneous compensator utilizes two-dimensional instantaneous space vector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470fc06fd484d3812e8c12b2bc968bf2
https://doi.org/10.4028/www.scientific.net/amm.533.397
https://doi.org/10.4028/www.scientific.net/amm.533.397
Publikováno v:
Solid-State Electronics. 52:946-951
A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62d1f8cd15223e0423b6833030fb88f5
https://doi.org/10.1016/j.sse.2007.12.009
https://doi.org/10.1016/j.sse.2007.12.009
Publikováno v:
Solid-State Electronics. 52:49-52
An InP/InGaAs/InP double heterojunction bipolar transistor was fabricated and its Ka-band power performance characterized. The device employed a 30 nm highly doped InGaAs base, and a 150 nm collector with an InAlGaAs linearly graded at the base-colle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a497011b595cfcd025345bd863a84665
https://doi.org/10.1016/j.sse.2007.06.009
https://doi.org/10.1016/j.sse.2007.06.009
Publikováno v:
IEEE Electron Device Letters. 30:1125-1127
A heterojunction-bipolar-transistor (HBT) noise model including the base-impedance effect is presented, which takes into account the base-contact capacitance and ac current crowding effect. The proposed noise model describes well the high-frequency n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::355b5129304013272c97db0e27694119
https://doi.org/10.1109/led.2009.2031132
https://doi.org/10.1109/led.2009.2031132
Publikováno v:
Microwave and Optical Technology Letters. 51:2200-2202
In this work, the selective Zn diffusion process is applied in the conventional p-i-n PD/HBT structure to improve the PD's performance. Without Zn diffusion, the top-illuminated PD need higher reverse bias to delay the screen effect. With Zn diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e25b21ab16e2bcc66112dd93a90a8b6
https://doi.org/10.1002/mop.24531
https://doi.org/10.1002/mop.24531
Publikováno v:
Microwave and Optical Technology Letters. 51:382-384
A low power consumption and high gain ultra-wide-band (UWB) low noise amplifier (LNA) utilizing a common-gate stage connected with a common-source stage by using current-reused structure is proposed. The implemented LNA exhibits a maximum power gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::816f5c87a5e4fae73566d7ca08f32eca
https://doi.org/10.1002/mop.24047
https://doi.org/10.1002/mop.24047
Autor:
Shou-Chien Huang, 黃守謙
102
Recent years, for the safety of utilizing electricity and reducing the occurrence of accidents, overcurrent devices and overload protection devices are needed in factories and low-voltage indoor distributed systems. But arc faults may cause
Recent years, for the safety of utilizing electricity and reducing the occurrence of accidents, overcurrent devices and overload protection devices are needed in factories and low-voltage indoor distributed systems. But arc faults may cause
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/96112852021004659244
Autor:
Shou-chien Huang, 黃守謙
97
In this dissertation, the dc, ac and noise characteristics of InGaP/GaAs HBTs with various base contact size are investigated. According to the discussions of dc and ac measurement results, the difference of noise performance between the HBTs
In this dissertation, the dc, ac and noise characteristics of InGaP/GaAs HBTs with various base contact size are investigated. According to the discussions of dc and ac measurement results, the difference of noise performance between the HBTs
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/93689506583860878375
Autor:
Shou-Chien Huang, 黃守謙
96
The study focuses on fireproof performance of spandrel structure which is applied to the glass curtain wall. Spandrel structures include spandrel wall fireproof structure and spandrel infill structure that both are the useful applications for
The study focuses on fireproof performance of spandrel structure which is applied to the glass curtain wall. Spandrel structures include spandrel wall fireproof structure and spandrel infill structure that both are the useful applications for
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01453495278523490250
Autor:
Kuang-Po Hsueh, Shou Chien Huang, Chun Ju Tun, Wei-Chih Lai, Yue Ming Hsin, Jinn-Kong Sheu, Ching Tai Li
Publikováno v:
Applied Physics Letters. 90:132111
This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO∕p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c298c3200d5670633ad5b66836e085b
https://doi.org/10.1063/1.2716324
https://doi.org/10.1063/1.2716324