Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shota Taniwaki"'
Autor:
Abdullah Uzum, Hiroyuki Kanda, Takuma Noguchi, Yuya Nakazawa, Shota Taniwaki, Yasushi Hotta, Yuichi Haruyama, Naoyuki Shibayama, Seigo Ito
Publikováno v:
International Journal of Photoenergy, Vol 2019 (2019)
Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, o
Externí odkaz:
https://doaj.org/article/9bbc48f9c1614eb2a0e845a32605eb6c
Autor:
Shota Taniwaki, Keiji Imanishi, Mitsuhiro Umano, Haruhiko Yoshida, Koji Arafune, Atsushi Ogura, Shin-Ichi Satoh, Yasushi Hotta
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 22, p1-6, 6p, 1 Color Photograph, 1 Diagram, 5 Graphs
Publikováno v:
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Investigation of the static electric field effect of strontium silicate layers on silicon substrates
Autor:
Haruhiko Yoshida, Koji Arafune, Shota Taniwaki, Atsushi Ogura, Yasushi Hotta, Keiji Imanishi, Mitsuhiro Umano, Shinichi Satoh
Publikováno v:
Journal of Applied Physics. 121:225302
We studied the effective net charge density (Qeff) of strontium silicate (SrxSiOx+2, x = 1, 2, 3) films grown on silicon (Si) (100) substrates. The SrxSiOx+2 layers were deposited from a Sr2SiO4 polycrystalline target by pulsed laser deposition, and
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Autor:
Atsushi Ogura, Haruhiko Yoshida, Shota Taniwaki, Y. Toyoshima, Shin-ichi Sato, Yasushi Hotta, K. Arafune
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:061506
The authors studied the correlation between the chemical bonding (CB) states and fixed charge (FC) states of Sr-silicate films grown on Si(100) substrates [Sr-silicate/Si(100)]. The Sr-silicate/Si(100) samples were synthesized by silicate reaction of
Autor:
Shota Taniwaki, Haruhiko Yoshida, Koji Arafune, Atsushi Ogura, Shin-ichi Satoh, Yasushi Hotta
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Nov/Dec2016, Vol. 34 Issue 6, p1-6, 6p