Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Shota Iizuka"'
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Autor:
Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori
Publikováno v:
IEEE Access, Vol 11, Pp 121567-121573 (2023)
This study investigates the origin of low-frequency (LF) 1/ $f$ noise in Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) under cryogenic operation. The fluctuation of the drain current increased with decreasing temperature
Externí odkaz:
https://doaj.org/article/85ccaad116e34e26a41e0f4a9d4dbb21
Autor:
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 074002 (2024)
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober t
Externí odkaz:
https://doaj.org/article/0dec5a0c307843deb506f838df9417f0
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1088
In this study, we propose technologies for the device structure, gate fabrication process, and back-bias-assisted operation of Si spin qubits to realize the high robustness of the two-qubit SWAP gate operation against process variations. We performed
Publikováno v:
Diamond Electrodes ISBN: 9789811678332
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f38ba5acf95fd66e575856ce727ddf
https://doi.org/10.1007/978-981-16-7834-9_5
https://doi.org/10.1007/978-981-16-7834-9_5
Autor:
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::846c29b345039cd48ffd0e8a4637fe27
Autor:
Junichi Hattori, Kimihiko Kato, Hiroshi Oka, Takahiro Mori, Tetsuya Ueda, Atsushi Yagishita, Tsutomu Ikegami, Hidehiro Asai, Koichi Fukuda, Shota Iizuka
Publikováno v:
VLSI Circuits
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buried wiring technology, for the first time. High-speed quantum-gate operation results from large slanting magnetic-field generated b
Autor:
Shota Iizuka, Yoshitaka Tateyama, Yuki Yamada, Atsuo Yamada, Norio Takenaka, Eriko Watanabe, Kasumi Miyazaki
Publikováno v:
The Journal of Physical Chemistry Letters. 10:6301-6305
Aqueous electrolytes have great potential to improve the safety and production costs of Li-ion batteries. Our recent materials exploration led to the discovery of the Li-salt dihydrate melt Li(TFSI...
Autor:
Yoshitaka Tateyama, Takeshi Watanabe, Hideyuki Kodama, Yasuaki Einaga, Hiroshi Kondoh, Ryo Toyoshima, Shota Iizuka, Takahiro Matsui, Yusuke Ootani, Tribidasari A. Ivandini
Publikováno v:
The Journal of Physical Chemistry C. 123:5336-5344
To study the influence of crystal orientation on the electrochemical properties of boron-doped diamond (BDD), electrodes comprising (100) and (111) homoepitaxial single-crystal layers of BDD were i...