Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Shosuke Fujii"'
Autor:
Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Kensuke Ota, Radu Berdan, Jun Deguchi, Masumi Saitoh, Takao Marukame, Yoshifumi Nishi, Marina Yamaguchi, Shosuke Fujii
Publikováno v:
Nature Electronics. 3:259-266
Analogue in-memory computing using memristors could alleviate the performance constraints imposed by digital von Neumann systems in data-intensive tasks. Conventional linear memristors typically operate at high currents, potentially limiting power ef
Autor:
S. Simon Wong, Shosuke Fujii, H.-S. Philip Wong, Shengjun Qin, Dongjin Lee, Haitong Li, Zizhen Jiang
Publikováno v:
IEEE Transactions on Electron Devices. 66:5147-5154
Using the reduced resistor network developed in Part I of this two-part article, we present practical design guidelines from device to architecture levels to achieve ultrahigh-density 3-D vertical resistive switching memory (VRSM). We first design bo
Autor:
Shengjun Qin, H.-S. Philip Wong, Dongjin Lee, Haitong Li, S. Simon Wong, Shosuke Fujii, Zizhen Jiang
Publikováno v:
IEEE Transactions on Electron Devices. 66:5139-5146
Resistive switching memory (RSM) shows potentials for high-capacity storage because of its simple cell structure, small footprint, and good scalability. This two-part article discusses how to implement ultrahigh-density (~terabits) storage with RSM c
Autor:
Masumi Saitoh, Shosuke Fujii, Reika Ichihara, Yuichiro Mitani, Yoko Yoshimura, Marina Yamaguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:2165-2171
The degradation behavior of Ag/SiO2-based conductive bridging RAM (CBRAM) is analyzed by conventional and expanded time-dependent dielectric breakdown (TDDB) models. By comparing the total cycling stress with time-to-breakdown ( ${t}_{\text {bd}}$ )
Autor:
Keisuke Takano, Masumi Saitoh, Kota Takahashi, Shosuke Fujii, Keisuke Akari, Marina Yamaguchi, Yuta Kamiya, Reika Ichihara, Kazuhiro Matsuo, Kiwamu Sakuma, Kunifumi Suzuki, Yuuichi Kamimuta, Kensuke Ota
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present the recent progress in HfO 2 -based ferroelectric FET (FeFET) and ferroelectric tunnel junction (FTJ) memory towards low-power and high-density storage and AI applications. A huge amount of interface trap charges coupled to spontaneous pol
Autor:
Marina Yamaguchi, Kensuke Ota, Shosuke Fujii, Reika Ichihara, Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Masumi Saitoh
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We investigated the effects of read current instabilities originated from depolarization field and charge trapping in HfO 2 ferroelectric tunnel junctions (FTJs) on the performance of in-memory reinforcement learning. We utilized, for the first time,
Publikováno v:
IRPS
We clarified breakdown mechanisms of HfO 2 -based ferroelectric tunnel junction (FTJ) memory via systematic time-dependent dielectric breakdown (TDDB) measurement for realization of reliable in-memory reinforcement learning (RL) system. The defect ge
Autor:
Fang Yuan, Fei Hui, Shosuke Fujii, Yang Chai, Shengjun Qin, Mario Lanza, Yuanyuan Shi, Jean Anne C. Incorvia, H.-S. Philip Wong
Publikováno v:
IEEE Electron Device Letters. 39:23-26
Control of cation injection into the switching layer of conductive-bridge random access memory (CBRAM) during switching is a critical factor for CBRAM reliability. Although extrinsic approaches such as the insertion of a transistor in series have pro