Zobrazeno 1 - 10
of 2 913
pro vyhledávání: '"Short-channel effect"'
Autor:
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized cha
Externí odkaz:
https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49
Autor:
Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD)
Externí odkaz:
https://doaj.org/article/e16c77267e8842d2987b290dc2fd0130
Autor:
Rinku Rani Das, Alex James
Publikováno v:
IEEE Access, Vol 12, Pp 462-470 (2024)
Multi-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have e
Externí odkaz:
https://doaj.org/article/f7fd11d1dcfc41b8a302f2e7e9a33090
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1187 (2024)
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/perf
Externí odkaz:
https://doaj.org/article/43ba645be2454ab1b6a2b24278f32255
Autor:
Laixiang Qin, Chunlai Li, Yiqun Wei, Guoqing Hu, Jingbiao Chen, Yi Li, Caixia Du, Zhangwei Xu, Xiumei Wang, Jin He
Publikováno v:
IEEE Access, Vol 11, Pp 14028-14042 (2023)
With transistors scaling down to 3 nm node and beyond, short channel effect (SCE) as well as power consumption dissipation present immense challenges for further scaling down of the transistor. Hence the Gate all around field effect transistor (GAA-F
Externí odkaz:
https://doaj.org/article/8e8065ebd35d4d16a46b10794b001d55
Akademický článek
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Akademický článek
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Autor:
Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 408-412 (2022)
We investigated the ferroelectric properties of self-induced HfGeOx in a HfO2 film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelect
Externí odkaz:
https://doaj.org/article/311a0af233af47548e8ad89f5cbad34c
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-13 (2022)
Abstract In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with th
Externí odkaz:
https://doaj.org/article/eebfb6b370434a23ab9686317b46bc85
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 65-71 (2022)
This paper, based on the IRDS 2022 technology node, investigates the DIBL and short-channel effects for InGaAs negative-capacitance FinFETs (NC-FinFETs) through a theoretical subthreshold drain current model considering key effects including negative
Externí odkaz:
https://doaj.org/article/2c34b775ba094e988aa9136b85085c36