Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Shoko Manako"'
Autor:
Yuriko Maegami, Ryohei Takei, Emiko Omoda, Shoko Manako, Toshihiro Kamei, Youichi Sakakibara, Junichi Fujikata, Masahiko Mori
Publikováno v:
11th International Conference on Group IV Photonics (GFP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59de157354871754fcaaccd0200480d8
https://doi.org/10.1109/group4.2014.6961943
https://doi.org/10.1109/group4.2014.6961943
Highly transpearent submicrometer-sclae amorphous silicon waveguide for backend optical interconnect
Publikováno v:
2014 Optical Interconnects Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18a4fa0a2c9b503253b42e06e244b1ef
https://doi.org/10.1109/oic.2014.6886116
https://doi.org/10.1109/oic.2014.6886116
Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect
Publikováno v:
Optics express. 22(4)
We demonstrate a submicrometer-scale hydrogenated amorphous silicon (a-Si:H) waveguide with a record low propagation loss of 0.60 ± 0.02 dB/cm because of the very low infrared optical absorption of our low defect a-Si:H film, the optimized waveguide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a629d3e6b1c9ce75be605c909b4c658e
https://pubmed.ncbi.nlm.nih.gov/24663796
https://pubmed.ncbi.nlm.nih.gov/24663796
Autor:
Eiichi Nomura, Hiromasa Yamamoto, Takahiro Teshima, Shoko Manako, Yukinori Ochiai, Jun-ichi Fujita
Publikováno v:
Journal of Photopolymer Science and Technology. 13:413-417
Calixarene is a promising high-resolution negative electron-beam resist having a resolution of the order of 10nm because of its low molecular weight. We have made a purified calixarene resist containing metal contaminants whose concentrations are mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4101449651c9513219eb82127a487c47
https://doi.org/10.2494/photopolymer.13.413
https://doi.org/10.2494/photopolymer.13.413
Autor:
J. Sone, Hisao Kawaura, J. S. Tsai, Yukinori Ochiai, Toshio Baba, Shoko Manako, Chii-Dong Chen, Jun-ichi Fujita, Toshitsugu Sakamoto, Yasunobu Nakamura, S. Matsui, Eiichi Nomura
Publikováno v:
Nanotechnology. 10:135-141
The device feature size in Si ULSIs has been reduced over the years, and sooner or later we will probably enter the so-called nanoelectronics era. Two nanofabrication technologies, electron-beam lithography and atomic-beam holography, which are expec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155dd5f0471221a3517bb4932cbcd00e
https://doi.org/10.1088/0957-4484/10/2/306
https://doi.org/10.1088/0957-4484/10/2/306
Publikováno v:
Microelectronic Engineering. :323-326
The resolution and sensitivity of calixarene resists in relation to incident electron energy were studied. While the sensitivity of the resists was varied in compliance with Bethe theory for the changes of the electron energy, resolution of the resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a25b7cfb5dfa6024c011de656cec31e
https://doi.org/10.1016/s0167-9317(98)00074-4
https://doi.org/10.1016/s0167-9317(98)00074-4
Publikováno v:
Journal of Photopolymer Science and Technology. 10:641-646
The resolution of organic resists has been investigated as a function of base resin structure and molecular weight. Calixarene, which has a ring structure, and polystyrene, which has a chain structure, were used for the investigation. The polystyrene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::710faf2dee338579f6c9220bd5c30c15
https://doi.org/10.2494/photopolymer.10.641
https://doi.org/10.2494/photopolymer.10.641
Autor:
Ryohei Takei, Youichi Sakakibara, Masao Suzuki, Emiko Omoda, Toshihiro Kamei, Masahiko Mori, Shoko Manako
Publikováno v:
10th International Conference on Group IV Photonics.
We demonstrated a vertical optical interlayer transfer device composed of a pair of inverse taper spot-size converters with an insertion loss of 1.8 dB using a CMOS back-end compatible process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76955fade14625af60415892f7d79c3a
https://doi.org/10.1109/group4.2013.6644441
https://doi.org/10.1109/group4.2013.6644441
Publikováno v:
Microelectronic Engineering. 30:415-418
Nanometer electron beam lithography has been used for fabrication of sub-0.1 μm MOSFETs. Chemically amplified resist as a single layer mask showed high resolution by optimizing the resist process. Proximity effect correction was applied and showed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb19c5d48046f8786b3692c6303860ec
https://doi.org/10.1016/0167-9317(95)00276-6
https://doi.org/10.1016/0167-9317(95)00276-6
Autor:
Kiyoshi Takeuchi, Shoko Manako, Jun-ichi Fujita, Toyoji Yamamoto, Seiji Samukawa, Yukinori Ochiai
Publikováno v:
Journal of Photopolymer Science and Technology. 9:715-722
A nanometer electron beam lithography system has been developed and used for fabricating sub-0.1μm gate MOSFETs. The system uses a Zr/O/W thermal field emitter (TFE) and has a 5-nm- diameter beam at a current of 100pA, and an acceleration voltage of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1962a6c14bb27855e90477eb0b3d38f1
https://doi.org/10.2494/photopolymer.9.715
https://doi.org/10.2494/photopolymer.9.715