Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Shoji Wakahara"'
Autor:
Takeshi Okagaki, O. Tsuchiya, Eiji Tsukuda, Hiroyuki Takashino, K. Ishikawa, Katsumi Eikyu, Y. Inoue, T. Hayashi, Shoji Wakahara, Motoaki Tanizawa, T. Uchida
Publikováno v:
IEEE Transactions on Electron Devices. 55:2632-2640
In this paper, we propose a new analytical electron mobility model in strained Si inversion layers suitable for implementation in a drift-diffusion simulator. Using our new model, a numerical study in conjunction with comprehensive bending experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f1684f1d8e5443a40bc714b8aa70c2
https://doi.org/10.1109/ted.2008.2003094
https://doi.org/10.1109/ted.2008.2003094
Autor:
Tsuneya Ando, Shoji Wakahara
Publikováno v:
Journal of the Physical Society of Japan. 61:1257-1270
A theory of the hot electron transport in strong magnetic fields is presented and is applied to the magnetophonon resonance (MPR) in semiconductors in high electric fields. The balance equations for energy and momentum are derived based on Zubarev's
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d49ff3f87e4966c115233c3e6d6ecfc1
https://doi.org/10.1143/jpsj.61.1257
https://doi.org/10.1143/jpsj.61.1257
Autor:
T. Uchida, Kenji Taniguchi, Eiji Tsukuda, Yoshinari Kamakura, T. Hayashi, Katsumi Eikyu, Takeshi Okagaki, O. Tsuchiya, Motoaki Tanizawa, Hiroyuki Takashino, K. Ishikawa, Yasuo Inoue, Shoji Wakahara
Publikováno v:
Simulation of Semiconductor Processes and Devices 2007 ISBN: 9783211728604
We have developed a system consisting of a full-3D process simulator for stress calculation and k · p band calculation that takes into account the subband structure. Our simulations are in good agreement with the experimental data of strained Si-pMO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3ba9c87ad7c7031abb8f969cd461c4
https://doi.org/10.1007/978-3-211-72861-1_7
https://doi.org/10.1007/978-3-211-72861-1_7
Autor:
O. Tsuchiya, Takeshi Okagaki, Katsumi Eikyu, Yasuo Inoue, Shoji Wakahara, T. Uchida, Eiji Tsukuda, Motoaki Tanizawa, K. Ishikawa, T. Hayashi, Hiroyuki Takashino
Publikováno v:
Simulation of Semiconductor Processes and Devices 2007 ISBN: 9783211728604
Numerical study in conjunction with comprehensive bending experiments has demonstrated that (100)-Si has the optimum channel direction along in terms of the device performance of strained 65nm-node nMOSFETs with Contact Etch Stop Layer (CESL), and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92197effb4b3f4826aec70e5a2c422a
https://doi.org/10.1007/978-3-211-72861-1_25
https://doi.org/10.1007/978-3-211-72861-1_25
Publikováno v:
Surface Science. 196:694-699
The boundary conditions of envelope functions for electrons and phonons at a heterointerface are investigated theoretically. The continuity boundary condition of envelope functions is justified for Γ-valley conduction electrons in GaAs/AlGaAs by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d2e6e239f349e2f8bb5dc6fab9775a
https://doi.org/10.1016/0039-6028(88)90764-9
https://doi.org/10.1016/0039-6028(88)90764-9
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