Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Shoji Nitta"'
Autor:
Nobuaki Kitazawa, Yoshihisa Watanabe, Shoji Nitta, Shunsuke Kikuchi, Masami Aono, Naoyuki Tamura
Publikováno v:
physica status solidi c. 7:797-800
Columnar structured amorphous carbon nitride films were deposited by reactive radio frequency magnetron sputtering from a graphite target in glow discharge plasma of nitrogen. The columnar structure was observed in all specimens of the amorphous carb
Autor:
T. Katsuno, Shoji Nitta
Publikováno v:
Diamond and Related Materials. 12:1887-1890
Amorphous carbon nitride a-CNx films prepared by a nitrogen radical sputter method show high photosensitivity PS=σp/σd, which is the ratio of photoconductivity σp and dark-electrical conductivity σd. In particular, PS of a-CNx prepared by a layer
Publikováno v:
Diamond and Related Materials. 12:672-676
Secondary-electron (SE) yields from amorphous carbon nitride (a-CN X ) films on Al foil were measured by using fully-stripped and fixed-velocity (6 MeV/n) heavy ion beams, C 6+ . The purpose of our research is to study the characteristics of a-CN X f
Publikováno v:
Diamond and Related Materials. 12:219-226
Amorphous carbon nitride films a-CNx were prepared by a nitrogen radical sputtering of a carbon target. A-CNx films were treated by atomic hydrogen or by an oxygen plasma, using a layer-by-layer method, forming LLa-CNx or LLa-CNxOy. These a-CNx films
Publikováno v:
Journal of Non-Crystalline Solids. :830-834
A new method––the layer-by-layer method––is used to prepare diamond like carbon (DLC) films. The layer-by-layer method is a cyclic process for the deposition of DLC by a rf magnetron sputtering using Ar gas and with alternate the atomic hydro
Autor:
Masami Aono, Shoji Nitta
Publikováno v:
Diamond and Related Materials. 11:1219-1222
Amorphous carbon nitride films, a-CNx, have been candidates for interlayer insulator materials on ultra large-scale integration (ULSI). The most important property of insulators for ULSI application is low dielectric constant, i.e. low-k. It is repor
Autor:
Yohko Naruse, Shoji Nitta
Publikováno v:
Diamond and Related Materials. 11:1210-1214
Amorphous carbon oxy-nitride films, a-CN x O y , are attractive for obtaining low dielectric constant materials and also for preparing photoconductive materials with a higher optical band gap than amorphous carbon nitride films, a-CN x . We found tha
Publikováno v:
Diamond and Related Materials. 11:1215-1218
Amorphous carbon nitride a-CN X films prepared by a nitrogen radical sputter method have been studied and found as good material applicable as photoconductive devices from 2 up to ultraviolet 6.2 eV. Especially a-CN X made by the layer-by-layer metho
Publikováno v:
Thin Solid Films. 395:240-243
The capability of hot-wire chemical vapor deposition (HWCVD, Cat-CVD) has been studied for the preparation of silicon–carbon alloy (Si1−xCx) films. The changes in deposition rate, carbon content, optical gap and IR absorption of SiC and CHn
Publikováno v:
Diamond and Related Materials. 10:1147-1151
Amorphous carbon nitride (a-CN x ) films made by a reactive sputtering of a carbon target with nitrogen plasma shows high resistivity and high electrical breakdown field. Therefore, a-CN x is a good material as a dielectric material. In this paper, t