Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Shoji Mimotogi"'
Autor:
Kinji Kimura, Taiki Kimura, Masami Takata, Shoji Mimotogi, Hiroki Tanaka, Yoshimasa Nakamura, Tetsuaki Matsunawa
Publikováno v:
Advances in Parallel & Distributed Processing, and Applications ISBN: 9783030699833
In semiconductor manufacturing process, lithography simulation modeling is known as an ill-posed problem. A normal solution of the problem is generally insignificant due to measurement constraints. In order to alleviate the difficulty, we introduced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f3a9fbe761e5bd3249f572070511c3f
https://doi.org/10.1007/978-3-030-69984-0_50
https://doi.org/10.1007/978-3-030-69984-0_50
Publikováno v:
Optical Microlithography XXXIII.
Lithography simulation is an essential technique for today's semiconductor manufacturing process. Although several rigorous models have been proposed, these methods are time-consuming. In order to calculate a full chip in realistic time, a fast and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be0cdca4846ff26e20f257bd88e892bf
https://doi.org/10.1117/12.2551859
https://doi.org/10.1117/12.2551859
Publikováno v:
Japanese Journal of Applied Physics. 45:5391-5395
In the 45 nm half pitch node, a mask induced polarization effect appears. Because of this effect, intensity of diffracted light depends on a pattern size and a diffraction order. This is pronounced in an attenuated phase shift mask (attPSM). A mask t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18cc5df93d2c70eab03742aa5c83d132
https://doi.org/10.1143/jjap.45.5391
https://doi.org/10.1143/jjap.45.5391
Autor:
Yasuyuki Taniguchi, Satoshi Tanaka, Junko Abe, Hiroko Nakamura, Kazuya Sato, Shoji Mimotogi, Soichi Inoue
Publikováno v:
Japanese Journal of Applied Physics. 45:5409-5417
The double line and space (L&S) formation method was proved to have the capability to form contact hole (C/H) patterns with high resolution and wide process windows. The drawback of the method is its high cost. By replacing two L&S masks by one C/H m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b69eda69d93408fe31f8c374025c2b64
https://doi.org/10.1143/jjap.45.5409
https://doi.org/10.1143/jjap.45.5409
Publikováno v:
SPIE Proceedings.
In progress of lithography technologies, the importance of Mask3D analysis has been emphasized because the influence of mask topography effects is not avoidable to be increased explosively. An electromagnetic filed simulation method, such as FDTD, RC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a4ffc7650ffbf5920b4e841e3b741bf
https://doi.org/10.1117/12.2046612
https://doi.org/10.1117/12.2046612
The prospects of design for roll to roll lithography: layout refinement utilizing process simulation
Autor:
Yohko Furutono, Ryoichi Inanami, Satoshi Tanaka, Mitsuko Shimizu, Masayuki Hatano, Shoji Mimotogi, Sachiko Kobayashi, Kazuto Matsuki
Publikováno v:
SPIE Proceedings.
Directed self-assembly (DSA) of block copolymers (BCPs) is a promising method for producing the sub-20nm features required for future semiconductor device scaling, but many questions still surround the issue of defect levels in DSA processes. Knowled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccdaccb6ce0e3013a71de77e5bfcef49
https://doi.org/10.1117/12.2046771
https://doi.org/10.1117/12.2046771
Autor:
Masanori Takahashi, Y. Kawabata, M. Motokubota, Shigeki Nojima, Simon Maeda, Shoji Mimotogi, Satoshi Tanaka, Katsuyoshi Kodera
Publikováno v:
SPIE Proceedings.
Mask-induced aberration, which causes the deterioration of pattern fidelity owing to the phase difference between the diffraction orders in sub-wavelength lithography conditions, is an intricate problem. To evaluate the extent of the effect computati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2986b4a3cfe3fae9c51b589752e73c47
https://doi.org/10.1117/12.2009116
https://doi.org/10.1117/12.2009116
Autor:
Toshiya Kotani, Fumiharu Nakajima, Shoji Mimotogi, Chikaaki Kodama, Shinji Miyamoto, Shigeki Nojima, Hirotaka Ichikawa, Koichi Nakayama
Publikováno v:
SPIE Proceedings.
In this paper, we propose a new flexible routing method for Self-Aligned Double Patterning (SADP). SADP is one of the most promising candidates for patterning sub-20 nm node advanced technology but wafer images must satisfy tighter constraints than l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f654d31c8cf43f11b23821e342bafc
https://doi.org/10.1117/12.2010644
https://doi.org/10.1117/12.2010644
Autor:
Shoji Mimotogi
Publikováno v:
SPIE Proceedings.
Patterning methods for sub-10nm half pitch are discussed. Four patterning methods are selected due to discussing their feasibility: immersion lithography with self-aligned octuplet patterning (Imm-SAOP), EUVL with self-aligned double patterning (EUV-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e2b4e06576ded970eae36dabbd417d
https://doi.org/10.1117/12.2015187
https://doi.org/10.1117/12.2015187
Autor:
Shoji Mimotogi, Toshiya Kotani, Chikaaki Kodama, Atsushi Takahashi, Shigeki Nojima, Koichi Nakayama, Hirotaka Ichikawa, Shinji Miyamoto
Publikováno v:
ASP-DAC
Although Self-Aligned Double and Quadruple Patterning (SADP, SAQP) have become the most promising processes for sub-20 nm and sub-14 nm node advanced technologies, not all wafer images are realized by them. In advanced technologies, feasible wafer im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::201182f34cd3c719e7e93d05ac0fe2bf
https://doi.org/10.1109/aspdac.2013.6509607
https://doi.org/10.1109/aspdac.2013.6509607