Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Shoji Ariizumi"'
Publikováno v:
Journal of Japan Institute of Electronics Packaging. 7:328-332
It is well known that liquid crystal polymer (LCP) films exhibit excellent mechanical and physical characteristics compared with those of other polymers. In order to apply LCP films on printed circuit boards, the etching conditions required for LCP f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a05fdd2c8b66fc34ecfcdb8b39453faa
https://doi.org/10.5104/jiep.7.328
https://doi.org/10.5104/jiep.7.328
Autor:
Shoji Ariizumi
Publikováno v:
The Annual review of sociology. 2002:165-176
The aim of this paper is to clarify the sociological thought in the Scottish Enlightenment. In order to approach this subject, it is necessary to analyze their moral philosophy, especially the critical point of selfish theory, of Scottish Enlightenme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::743eb3acc5c2728fa95b7480853cdfb6
https://doi.org/10.5690/kantoh.2002.165
https://doi.org/10.5690/kantoh.2002.165
Publikováno v:
1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
An 8K×9 NMOS SRAM using a shared-word line and one-eighth activated row decoder circuit, achieving 18ns access times and 500mW active power dissipation, will be reported. The SRAM was fabricated in 1.5μm double-poly, double-metal process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37cb3c13590913ff32c8c7964c0e0a74
https://doi.org/10.1109/isscc.1986.1156954
https://doi.org/10.1109/isscc.1986.1156954
Publikováno v:
IEEE Journal of Solid-State Circuits. 19:651-657
A high-speed 1-Mb MASK ROM incorporating a new through-hole programmed memory cell, named THOLE CELL, and a full CMOS static sense amplifier is described. The ROM has been fabricated using a double-polysilicon p-well CMOS technology. As a result of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ec44a98bbee23acafc5db6809dae73
https://doi.org/10.1109/jssc.1984.1052204
https://doi.org/10.1109/jssc.1984.1052204
Publikováno v:
1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
This paper will describe a 1Mb programmable ROM incorporating a through-hole programmed mask ROM cell and a CMOS fully static sense amp. The ROM has been fabricated using a double poly-Si P-well CMOS technology, achieving a cell size of 33μm2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30693f238cc092ebb2a0d087e11dbcbf
https://doi.org/10.1109/isscc.1984.1156660
https://doi.org/10.1109/isscc.1984.1156660
Publikováno v:
1983 International Electron Devices Meeting.
A new through-hole programmed MASK ROM cell which is suitable for 1Mbit high speed MASK ROM with short turn around time in programming processes, and small cell size is descrived. The memory cell is implemented by NOR gate type which is most suitable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea8b6dbaf5aa5df4d1c052825279274
https://doi.org/10.1109/iedm.1983.190572
https://doi.org/10.1109/iedm.1983.190572
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