Zobrazeno 1 - 10
of 237
pro vyhledávání: '"Shoichiro Tanigawa"'
Publikováno v:
Dislocations in Solids ISBN: 9780429070914
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d09fbd5dbeb6ab5921575a42383b8d
https://doi.org/10.1201/9780429070914-32
https://doi.org/10.1201/9780429070914-32
Publikováno v:
physica status solidi (b). 231:149-156
The three-dimensional electron density in momentum space ?(P) and in wave vector space n(k) were constructed for Sr 2 RuO 4 . The measurements were achieved using 512 detectors to yield two dimensional angular correlation of annihilation radiation 2D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de76b917d4cc52b80a73c0a2f7e5c420
https://doi.org/10.1002/1521-3951(200205)231:1<149::aid-pssb149>3.0.co
https://doi.org/10.1002/1521-3951(200205)231:1<149::aid-pssb149>3.0.co
Autor:
Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado, Tetsuji Ueno, Toshifumi Irisawa, Akira Uedono, Shoichiro Tanigawa, Yasuhiro Shiraki
Publikováno v:
Journal of Crystal Growth. :761-765
To assess the unique properties of low-temperature (LT) grown Si on which high-quality SiGe pseudo-substrates were obtained, positron annihilation spectroscopy (PAS) measurements were done for Si layers deposited at growth temperatures between 200°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6fb06f0506de705f94c10c0951c27c6
https://doi.org/10.1016/s0022-0248(01)00822-3
https://doi.org/10.1016/s0022-0248(01)00822-3
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 39:835-842
Lifetime spectra of positrons were measured for styrene–butadiene rubber (SBR) vulcanizates filled with carbon black (CB) or silica. At temperatures between 10 and 420 K, no large difference between the size of the open spaces in the CB/SBR vulcani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3597910e2f10d7d4a331dc8ca06162
https://doi.org/10.1002/polb.1058
https://doi.org/10.1002/polb.1058
Publikováno v:
Thin Solid Films. 369:320-323
Characterization of low-temperature (LT) Si and SiGe on the LT-Si grown by molecular beam epitaxy was carried out. Positron annihilation spectroscopy showed that the size of point defects in LT-Si grown at 4008C was much larger than divacancies. Thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4bb9853c5a608d259a8c4f71b4ce34c
https://doi.org/10.1016/s0040-6090(00)00872-5
https://doi.org/10.1016/s0040-6090(00)00872-5
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
Autor:
Gerhard Pensl, Akira Uedono, Toshiyuki Ohdaira, Takeshi Ohshima, Ryoichi Suzuki, Thomas Frank, Hisayoshi Itoh, Isamu Nashiyama, Shoichiro Tanigawa, Masahito Yoshikawa, Tomohisa Mikado
Publikováno v:
Scopus-Elsevier
Depth distributions and species of defects were determined from measurements of Doppler broadening spectra of annihilation radiation and lifetime spectra of positrons for 6H-SiC implanted with 200 keV P+ at a dose of 1×1015 cm−2. The annealing beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d529f533c2ae7d6610664216db84e14
https://doi.org/10.1063/1.373039
https://doi.org/10.1063/1.373039
Autor:
Tomohisa Mikado, Atsushi Ogura, Akira Uedono, Ryoichi Suzuki, Toshiyuki Ohdaira, Haruhiko Ono, Shoichiro Tanigawa
Publikováno v:
Journal of Applied Physics. 87:1659-1665
The depth distributions and species of defects in Si on insulator (SOI) fabricated by low-dose oxygen implantation were determined from measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons. The te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55676c223773accc00f66cbcccc5a5d3
https://doi.org/10.1063/1.372074
https://doi.org/10.1063/1.372074
Publikováno v:
Journal of Physics: Condensed Matter. 12:719-728
Annihilation characteristics of positrons in Si in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. The line-shape parameter of the Doppler broadening spectrum for the annihilation of positrons at the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e21255d2892507a0f26f5392d0bf679
https://doi.org/10.1088/0953-8984/12/5/318
https://doi.org/10.1088/0953-8984/12/5/318
Autor:
Akira Uedono, M. Ban, Michihisa Kyoto, Shoichiro Tanigawa, Toshiyuki Ohdaira, Tomohisa Mikado, T. Uozumi, R. Suzuki
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 38:101-107
Open spaces and relaxation processes in the subsurface region of isotactic polypropylene were investigated by monoenergetic positron beams. From measurements of the lifetime spectra of positrons, the size of the open spaces in the subsurface region (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea09bbb9a1431d307a60dcd49904bb6
https://doi.org/10.1002/(sici)1099-0488(20000101)38:1<101::aid-polb13>3.0.co
https://doi.org/10.1002/(sici)1099-0488(20000101)38:1<101::aid-polb13>3.0.co
Autor:
Ryoichi Suzuki, Mariko Makabe, Tomohisa Kitano, Tomohisa Mikado, Masako Hiketa, Shoichiro Tanigawa, Toshiyuki Ohdaira, T. Kubota, Akira Uedono
Publikováno v:
Journal of Applied Physics. 86:5385-5391
Defects in p+-gate metal–oxide–semiconductor structures were probed using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for BF2+- or B+-implanted polycrysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::371c15b4c50f28af232b9aa4c9cbd002
https://doi.org/10.1063/1.371535
https://doi.org/10.1063/1.371535