Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Shoichiro Imanishi"'
Autor:
Reem Alhasani, Taichi Yabe, Yutaro Iyama, Nobutaka Oi, Shoichiro Imanishi, Quang Ngoc Nguyen, Hiroshi Kawarada
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide ba
Externí odkaz:
https://doaj.org/article/3ea4eb941523412dbfdd0d4a207cc70a
Autor:
Benjian Liu, Te Bi, Yu Fu, Ken Kudara, Shoichiro Imanishi, Kang Liu, Bing Dai, Jiaqi Zhu, Hiroshi Kawarada
Publikováno v:
IEEE Transactions on Electron Devices. 69:949-955
Autor:
Shintaro Shinjo, Ken Kudara, Shoichiro Imanishi, Yutaro Yamaguchi, Yuji Komatsuzaki, Atsushi Hiraiwa, Hiroshi Kawarada, Yoshifumi Kawamura
Publikováno v:
IEEE Transactions on Electron Devices. 68:3942-3949
This article reports on the high operation voltage large-signal performance of two-dimensional hole gas diamond metal–oxide semiconductor field-effect transistors (MOSFETs) with thick atomic-layer-deposition (ALD)-Al2O3 formed on high purity polycr
Autor:
Atsushi Hiraiwa, Masayuki Iwataki, Shotaro Amano, Ken Kudara, Hitoshi Ishiwata, Shoichiro Imanishi, Hiroshi Kawarada, Kiyotaka Horikawa, Aoi Morishita
Publikováno v:
IEEE Electron Device Letters. 42:204-207
We report two-dimensional hole gas (2DHG) diamond field-effect transistors (FETs) with microwave plasma chemical vapor deposition (MPCVD)-regrown p+-diamond (B concentration $\sim \,\,1\times 10 ^{22}$ /cm3) ohmic contacts. The heavily doped p+-diamo
Autor:
Taichi Yabe, Reem Mohammed Alhasani, Hiroshi Kawarada, Yutaro Iyama, Shoichiro Imanishi, Quang N. Nguyen, Nobutaka Oi
Publikováno v:
Scientific Reports. 12
Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap mat
Publikováno v:
Journal of Geometry and Physics. 180:104623
In this paper, we provide a recipe for computing Euler number of Grassmann manifold G(k,N) by using Mathai-Quillen formalism (MQ formalism) and Atiyah-Jeffrey construction. Especially, we construct path-integral representation of Euler number of G(k,
Autor:
Atsushi Hiraiwa, Hiroshi Kawarada, Kiyotaka Horikawa, Nobutaka Oi, Taisuke Kageura, Satoshi Okubo, Shoichiro Imanishi
Publikováno v:
IEEE Electron Device Letters. 40:279-282
This letter reports the small-signal and large-signal performances at high drain voltage ( $\text{V}_{\textsf {DS}}$ ) ranging up to 60 V for a 0.5 $\mu \text{m}$ gate length two-dimensional hole gas diamond metal-oxide-semiconductor field-effect tra
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Autor:
Yukiko Suzuki, Shoichiro Imanishi, Ken Kudara, Kiyotaka Horikawa, Shotaro Amano, Masayuki Iwataki, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.