Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Shoichi Onda"'
Autor:
Takashi Ishida, Takashi Ushijima, Shosuke Nakabayashi, Kozo Kato, Takayuki Koyama, Yoshitaka Nagasato, Junji Ohara, Shinichi Hoshi, Masatake Nagaya, Kazukuni Hara, Takashi Kanemura, Masato Taki, Toshiki Yui, Keisuke Hara, Daisuke Kawaguchi, Koji Kuno, Tetsuya Osajima, Jun Kojima, Tsutomu Uesugi, Atsushi Tanaka, Chiaki Sasaoka, Shoichi Onda, Jun Suda
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 026501 (2024)
To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which r
Externí odkaz:
https://doaj.org/article/3223aa72ff4e4785aca11409f44a7c1a
Publikováno v:
Japanese Journal of Applied Physics. 62:020903
We investigated the effect of H2 addition in halide-vapor-phase epitaxy of GaN on Ga-polar GaN(0001) using an external GaCl3 supply method. To overcome the problem of the very low growth rate on GaN(0001) using GaCl3, we intentionally added H2 to con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1452ea4c940adc829d759b959b74686c
https://doi.org/10.35848/1347-4065/acb97b
https://doi.org/10.35848/1347-4065/acb97b
Autor:
Kazukuni Hara, Eizou Yamamoto, Motoi Kozawa, Daisuke Uematsu, Junji Ohara, Yuji Mukaiyama, Jun Kojima, Shoichi Onda, Jun Suda
Publikováno v:
Japanese Journal of Applied Physics. 61:070909
One critical issue hindering high-quality, high-speed growth of GaN is cluster formation in the gas phase. We investigated cluster formation in tri-halide vapor phase epitaxial growth of GaN. The growth system is equipped with an external GaCl3 gas s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1aa8c368a08f56dbabadfc773e3e5b
https://doi.org/10.35848/1347-4065/ac7a7a
https://doi.org/10.35848/1347-4065/ac7a7a
Publikováno v:
Materials Science Forum. 858:401-404
We characterized threading screw dislocations to investigate the influence on device performance. The Burgers vectors of the threading screw dislocations (a total of 28dislocations) in 4H-SiC were determined by large-angle convergent-beam electron di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8deecbe7a22e8b63e0dd347a3c752a06
https://doi.org/10.4028/www.scientific.net/msf.858.401
https://doi.org/10.4028/www.scientific.net/msf.858.401
Autor:
Eiji Kojima, Masaaki Araidai, K. Endo, Shoichi Onda, Y. Ebihara, Hiroki Shirakawa, Kenji Shiraishi, Kenta Chokawa, Takashi Kanemura
Publikováno v:
Journal of Crystal Growth. 468:758-760
We are attempting to develop a new type of vertical MOSFET with SiC/AlGaN heterojunction. Toward the realization of the vertical MOSFET, the control of conduction-band offset is one of the crucial subjects. We investigated the conduction-band offset
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa22f27a70a7410fc41edebd75bc3dc
https://doi.org/10.1016/j.jcrysgro.2016.11.066
https://doi.org/10.1016/j.jcrysgro.2016.11.066
Autor:
Toru Ujihara, Shunta Harada, Yosuke Tsunooka, Hisashi Yamada, Mitsuaki Shimizu, Shoichi Onda, Nobuhiko Kokubo, Sho Inotsume, Miho Tagawa, Fumihiro Fujie
Publikováno v:
Japanese Journal of Applied Physics. 60:SAAD03
The strain field of the tilted threading dislocation (TD) in a hydride vapor-phase epitaxy-grown c-plane (0001) GaN single crystal is demonstrated using Raman spectroscopy. In the two-dimensional mapping image of the E2 H peak shift around TDs, high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::076a6abf74703d7964117fea9d023955
https://doi.org/10.35848/1347-4065/abc7a1
https://doi.org/10.35848/1347-4065/abc7a1
Autor:
Nobuhiko Kokubo, Shunta Harada, Toru Ujihara, Jun Kojima, Hisashi Yamada, Miho Tagawa, Junji Ohara, Shoichi Onda, Sho Inotsume
Publikováno v:
physica status solidi (b). 257:1900527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::421552d8ec092e5d60401ae203a8fe49
https://doi.org/10.1002/pssb.201900527
https://doi.org/10.1002/pssb.201900527
Autor:
Hiroyuki Kondo, Hiroki Watanabe, Hiroyasu Saka, Shoichi Onda, Hideyuki Uehigashi, Takeshi I. Okamoto
Publikováno v:
Philosophical Magazine Letters. 95:489-495
The Burgers vectors of the so-called threading screw dislocations (a total of 28 dislocations) in 4H-SiC were determined by large-angle convergent-beam electron diffraction. A new type of TSD, that is, b = c + 2a dislocation, was identified. Thus, al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2be23f0787041b16b3a363524080e03
https://doi.org/10.1080/09500839.2015.1100762
https://doi.org/10.1080/09500839.2015.1100762
Autor:
Masanori Yamada, Takayuki Sato, Akihiro Matsuse, Naohiro Sugiyama, Yasushi Urakami, Takahiro Kozawa, Itaru Gunjishima, Hidetaka Takaba, Hiroyuki Kondo, Shoichi Yamauchi, Fusao Hirose, Masuda Takashi, Shoichi Onda, Nobuyuki Ooya, K. Shigeto, Masakazu Kobayashi, Okamoto Takeshi
Publikováno v:
Materials Science Forum. :17-21
We have developed RAF (Repeated a-face) growth method which is high quality bulk crystal growth technology [1, 2]. A block crystal more than 150 mm square size was produced by the RAF growth method. Since c-face growth crystal was produced on the see
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262f787cbd3b89d06497363e536b258b
https://doi.org/10.4028/www.scientific.net/msf.778-780.17
https://doi.org/10.4028/www.scientific.net/msf.778-780.17
Publikováno v:
Materials Science Forum. :51-54
Our latest results of SiC bulk growth by High-Temperature Gas Source Method are given in this paper. Based on Mullins-Sekerka instability, optimal growth conditions to preclude dendrite crystals, which are one of the pending issues for high-speed bul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e9313d681f4be980a9e2c8a42021be
https://doi.org/10.4028/www.scientific.net/msf.778-780.51
https://doi.org/10.4028/www.scientific.net/msf.778-780.51