Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shoichi Ogata"'
Autor:
Shoichi Ogata
Publikováno v:
JAPAN TAPPI JOURNAL. 75:536-539
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc77340a5ba36fb1fed6f4a750348da7
https://doi.org/10.2524/jtappij.75.536
https://doi.org/10.2524/jtappij.75.536
Autor:
Shoichi Ogata, Shunich Tanaka, Ikkou Shimizu, Mikio Kanemaru, Kinta Hatakeyama, Masahiro Kai, Hiroyuki Koita, Takashi Asada
Publikováno v:
Nihon Rinsho Geka Gakkai Zasshi (Journal of Japan Surgical Association). 81:292-296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0c79ab50301e3077863940637dc76fa
https://doi.org/10.3919/jjsa.81.292
https://doi.org/10.3919/jjsa.81.292
Autor:
Shinya Ohno, Yuden Teraoka, Masahiro Morimoto, Akitaka Yoshigoe, Shoichi Ogata, Masatoshi Tanaka, Sadanori Arae, Kei Inoue, Tetsuji Yasuda, Hiroaki Toyoshima
Publikováno v:
Surface Science. 606:1685-1692
The initial oxidation on high-index silicon surfaces with (113) and (120) orientations at 820 K has been investigated by real-time X-ray photoemission spectroscopy (Si 2p and O 1s) using 687 eV photons. The time evolutions of the Si n + ( n = 1–4)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bec960e51aaaf0c4e2898262b46634
https://doi.org/10.1016/j.susc.2012.07.011
https://doi.org/10.1016/j.susc.2012.07.011
Autor:
Shinya Ohno, Tsuyoshi Horikawa, Masatoshi Tanaka, Tetsuji Yasuda, Takahiro Mori, Shoichi Ogata
Publikováno v:
Thin Solid Films. 519:2830-2833
Reflectance difference spectroscopy (RDS) was applied to the characterization of SiO 2 /Si, GeO 2 /Ge, and high-k/III–V interface structures. We extended the spectral range of RDS to 8.4 eV in order to explore the optical transitions at the dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43dbd6fcbc87bfbc1f5782b41867a672
https://doi.org/10.1016/j.tsf.2010.12.088
https://doi.org/10.1016/j.tsf.2010.12.088
Autor:
Rui Kanemura, Shoichi Ogata, Sosuke Abe, Akitaka Yoshigoe, Yuden Teraoka, Tetsuji Yasuda, Shinya Ohno, Masatoshi Tanaka
Publikováno v:
Applied Physics Express. 6:115701
Thermal oxidation of high-index silicon surfaces, Si(113), Si(331), and Si(120), in a monolayer regime has been investigated by X-ray photoelectron spectroscopy (XPS) with synchrotron radiation. The oxide thickness, composition, and band bending are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1757c61174e4c293042624b124e46443
https://doi.org/10.7567/apex.6.115701
https://doi.org/10.7567/apex.6.115701
Autor:
Tsuyoshi Horikawa, Shoichi Ogata, Tetsuji Yasuda, Masatoshi Tanaka, Takahiro Mori, Shinya Ohno
Publikováno v:
Applied Physics Letters. 98:092906
Interface trap densities, Dit, at the thermally oxidized Si surfaces were investigated for the (001), (111), (110), (120), (331), and (113) orientations. The oxides were formed by dry or wet oxidation in the temperature range of 700–950 °C. Dit to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2525ba47fa054c85d500f22a920de0
https://doi.org/10.1063/1.3561741
https://doi.org/10.1063/1.3561741
Publikováno v:
Japanese Journal of Applied Physics. 49:022403
Reflectance difference spectroscopy (RDS) in the vacuum–ultraviolet (VUV) range has been developed for the first time. The spectral range of RDS has been extended up to 8.4 eV by using a D2 lamp, MgF2-based optical elements, and an N2-purged measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10271a97533e2795ea10e343d663075c
https://doi.org/10.1143/jjap.49.022403
https://doi.org/10.1143/jjap.49.022403