Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Shoichi Kurita"'
Publikováno v:
Journal of Crystal Growth. 137:240-244
AlGaInP is the most promising material for visible wavelength light sources for laser-printing and audio compact disc systems. Unfortunately, it is difficult to grow controllably this crystal by conventional liquid phase epitaxy (LPE) growth, dur to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0b5b3fe5d54c851d76441520c0ebc5
https://doi.org/10.1016/0022-0248(94)91278-5
https://doi.org/10.1016/0022-0248(94)91278-5
Publikováno v:
Crystal Research and Technology. 28:711-716
The fabrication and characterization of double-heterostructure (DH) laser that utilizes an indium-tin oxide (ITO) transparent cladding and top contact layer. The first room-temperature lasing operation has been obtained from ITO/InGaAsP/AlGaAs DH las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320c04c55f9c65f0d1c3937274025861
https://doi.org/10.1002/crat.2170280523
https://doi.org/10.1002/crat.2170280523
Publikováno v:
Crystal Research and Technology. 28:469-477
Liquid phase epitaxial layers of AlGaInP were successfully grown on Al 0.9 Ga 0.1 As buffer layer with varying aluminum melt composition. Epitaxial layers were characterised by using a scanning elelctron microscope, X-ray diffraction, photoluminescen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10750f37a70eaa9da7c954acc58eb376
https://doi.org/10.1002/crat.2170280409
https://doi.org/10.1002/crat.2170280409
Autor:
Shuji Hirai, Satoshi Tayama, Makito Yamaguchi, Seiji Suzuki, Shinichi Takahashi, Shoichi Kurita
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 112:375-383
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3b03b57f7158c7bafc54297bcc7f0b
https://doi.org/10.1541/ieejfms1990.112.5_375
https://doi.org/10.1541/ieejfms1990.112.5_375
Publikováno v:
Solar Energy Materials. 23:363-370
InGaAsP homojunction solar cells have been fabricated. InGaAsP layer of which the bandgap is 1.55 eV has been lattice-matched to GaAs substrate by LPE growth. Al0.8Ga0.2As has been introduced as window layer blocking layer. The best cell without an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70106be718bd99c15eaecccda89465b
https://doi.org/10.1016/0165-1633(91)90142-8
https://doi.org/10.1016/0165-1633(91)90142-8
Autor:
H. Kuriyama, Y. Taura, T. Ohyama, Shoichi Kurita, Yoshinori Kuno, S. Hamada, M. Ikeda, N. S.-I. Takahashi
Publikováno v:
Conference Record of the 1991 International Display Research Conference.
Novel spatial light modulators (SLMs) using ferroelectric liquid crystal (FLC) and amorphous silicon (a-Si) are proposed. A novel FLC-SLM enables real-time optical-data processing by applying high-frequency voltage, which the FLC cannot follow, to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31f5f1493b9a8cdd61a5e2bed619c20
https://doi.org/10.1109/displ.1991.167457
https://doi.org/10.1109/displ.1991.167457
Publikováno v:
Journal of The Electrochemical Society. 137:343-345
In 1−x Ga x As y P 1−y (y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::191cac8338baa0c12bf09f32d5cba1b3
https://doi.org/10.1149/1.2086416
https://doi.org/10.1149/1.2086416
Autor:
Toshikazu Suda, Shoichi Kurita
Publikováno v:
Journal of Applied Physics. 50:483-488
The effect of the primary light intensity (corresponding to the fundamental absorption edge) on the infrared quenching of photocapacitance (PHCAP IR quenching) in CdS : Cu evaporated films has been studied. Two methods, viz., the two‐beam and three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08806efc2fd000bc5379dd30ff5ebde7
https://doi.org/10.1063/1.325638
https://doi.org/10.1063/1.325638
Autor:
Shoichi Kurita, Hanji Satone
Publikováno v:
JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN. 67:606-614
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56a7221c28f4531967f975368231308e
https://doi.org/10.2150/jieij1980.67.12_606
https://doi.org/10.2150/jieij1980.67.12_606
Publikováno v:
Journal of Crystal Growth. 94:911-918
Liquid-phase-epitaxial (LPE) growth of Al x Ga 1− x As layers at 700°C has been used in the fabrication of 0.8 μ m InGaAsP buried heterostructure (BH) lasers grown on GaAs substrates. The solidus composition, X , was 0.66. By etching the mesa in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b031f98b11f546c53c242fc80afe036
https://doi.org/10.1016/0022-0248(89)90124-3
https://doi.org/10.1016/0022-0248(89)90124-3