Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Shogo Murashige"'
Autor:
Kohhei Tanaka, Takahisa Shimizu, Yoshiharu Kataoka, Tohru Sonoda, Shogo Murashige, Kenji Takase, Takuya Okada, Takenobu Usui, Hiromi Katoh
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1261-1264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2be6789c6960958095e3a961912928b
https://doi.org/10.1002/sdtp.14109
https://doi.org/10.1002/sdtp.14109
Autor:
Mehadi Aman, Naoki Makita, Ishida Izumi, Yujiro Takeda, Shogo Murashige, Hiroshi Matsukizono, Kazuatsu Ito
Publikováno v:
ITE Transactions on Media Technology and Applications. 8:224-229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94627bfb3dc3805ed93e60ed43453663
https://doi.org/10.3169/mta.8.224
https://doi.org/10.3169/mta.8.224
Autor:
Shogo Murashige, Kazuatsu Ito, Izumi Ishida, Nakajima Shinji, Naoki Makita, Shunsuke Kobayashi, Hiroshi Matsukizono, Yujiro Takeda
Publikováno v:
SID Symposium Digest of Technical Papers. 50:516-519
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ee3c635a89bdfd3e67caf38850efb8a
https://doi.org/10.1002/sdtp.12970
https://doi.org/10.1002/sdtp.12970
Autor:
Kohhei Tanaka, Takahisa Shimizu, Hiromi Katoh, Yoshiharu Kataoka, Takuya Okada, Takenobu Usui, Tohru Sonoda, Kenji Takase, Shogo Murashige
Publikováno v:
2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
In this study, we report 30-inch 4K rollable AM-OLED display, featuring IGZO-TFT backplane and side by side evaporation process with etching fine metal mask. Adaptive temporal aperture control as a driving method is used to improve motion image quali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d23e004188390f6442269f23d75f061
https://doi.org/10.23919/am-fpd49417.2020.9224484
https://doi.org/10.23919/am-fpd49417.2020.9224484
Autor:
Shogo Murashige, Mehadi Aman, Yujiro Takeda, Izumi Ishida, Masahito Sano, Kaoru Yamamoto, Kazuatsu Ito, Kohei Tanaka, Hiroshi Matsukizono
Publikováno v:
Proceedings of the International Display Workshops. :132
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71145e9dde09c3824fa42872ad070f1b
https://doi.org/10.36463/idw.2021.0132
https://doi.org/10.36463/idw.2021.0132
Autor:
Yujiro Takeda, Aman Mehadi, Shogo Murashige, Kazuatsu Ito, Izumi Ishida, Shinji Nakajima, Hiroshi Matsukizono, Naoki Makita
Publikováno v:
Proceedings of the International Display Workshops. :468
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e9ade6cbee5ac17cc0c94282bba7ed
https://doi.org/10.36463/idw.2019.0468
https://doi.org/10.36463/idw.2019.0468
Autor:
Setsuo Nakajima, Mitsutaka Matsumoto, Tsuyoshi Uehara, Syun Ito, Maki Suemitsu, Shogo Murashige, Hirokazu Fukidome, Yohei Inayoshi, Yasutake Toyosihima
Publikováno v:
ECS Transactions. 25:345-350
By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::450f0b266cb64c2a0108f6ee969ca097
https://doi.org/10.1149/1.3202672
https://doi.org/10.1149/1.3202672
Autor:
Mitsutaka Matsumoto, Yohei Inayoshi, Shogo Murashige, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyosihima
Publikováno v:
ECS Meeting Abstracts. :2097-2097
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d39a9ae006d18ecdb33fbec3e64fd0de
https://doi.org/10.1149/ma2009-02/24/2097
https://doi.org/10.1149/ma2009-02/24/2097
Autor:
Tsuyoshi Uehara, Setsuo Nakajima, Yohei Inayoshi, Mitsutaka Matsumoto, Maki Suemitsu, Yasutake Toyoshima, Shogo Murashige
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:223
Ammonia-free deposition of silicon nitride (SiNX) films have been achieved on Si(100) substrate at low temperature (200°C) by using plasma enhanced chemical vapor deposition operated at near atmospheric pressure. A pulsed power supply enables a stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86554089017e7f50c6118e2e4e70bc57
https://doi.org/10.1116/1.3021039
https://doi.org/10.1116/1.3021039