Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Sho Iwayama"'
Autor:
Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-5 (2017)
Abstract This study investigated electron beam laser excitation in the UV region using a GaN/AlGaN multiquantum well (MQW) active layer. Laser emission was observed when the GaN/AlGaN MQW was excited by an electron beam, with a wavelength of approxim
Externí odkaz:
https://doaj.org/article/5d1a474184ad40c3884eef852916023a
Autor:
Eri Matsubara, Tomoya Omori, Ryota Hasegawa, Kazuki Yamada, Ayumu Yabutani, Ryosuke Kondo, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
Publikováno v:
physica status solidi (a).
Autor:
Ayumu Yabutani, Ryota Hasegawa, Ryosuke Kondo, Eri Matsubara, Daichi Imai, Sho Iwayama, Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru, Hironori Torii, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
Publikováno v:
physica status solidi (a).
Publikováno v:
Novel In-Plane Semiconductor Lasers XXII.
Autor:
Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, Akihiko Yamaguchi
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Autor:
Motoaki Iwaya, Tomoya Omori, Satoshi Kamiyama, Ayumu Yabutani, Tetsuya Takeuchi, Ryota Hasegawa, Moe Shimokawa, Sho Iwayama, Hideto Miyake
Publikováno v:
2021 27th International Semiconductor Laser Conference (ISLC).
Autor:
Ryosuke Kondo, Ayumu Yabutani, Tomoya Omori, Kazuki Yamada, Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
Publikováno v:
Applied Physics Letters. 121:253501
In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The oscillation wavelength, differential quantum efficiency, and slope efficiency of a laser diode wer
Autor:
Eri Matsubara, Ryota Hasegawa, Toma Nishibayashi, Ayumu Yabutani, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Kanako Shojiki, Shinya Kumagai, Hideto Miyake, Motoaki Iwaya
Publikováno v:
Applied Physics Express. 15:116502
Thin films of AlN, AlGaN, and AlGaN-based device structures of approximately 1 cm2 formed on a sapphire substrate were successfully exfoliated from the substrate by immersion in heated (115 °C) and pressurized (170 kPa) water. These thin films were
Autor:
Kanako Shojiki, Moe Shimokawa, Sho Iwayama, Tomoya Omori, Shohei Teramura, Akihiro Yamaguchi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
Publikováno v:
Applied Physics Express. 15:051004
The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed
Autor:
Satoshi Kamiyama, Kazuki Yamada, Isamu Akasaki, Moe Shimokawa, Kosuke Sato, Hideto Miyake, Sayaka Ishizuka, Tetsuya Takeuchi, Motoaki Iwaya, Sho Iwayama, Shohei Teramura, Shunya Tanaka, Tomoya Omori, Yuya Ogino
Publikováno v:
Gallium Nitride Materials and Devices XVI.
Ultraviolet (UV) semiconductor lasers are widely used in medical and industrial applications, and their commercialization is strongly desired. Recently, laser oscillation by current injection in the UV-C and UV-B regions has been reported . From now