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pro vyhledávání: '"Shmuel Saad"'
Autor:
Sanghoon Lee, Marinus Hopstaken, Christian Lavoie, Michael R. Saccomanno, David Memram, Moti Katz, Arnold Bloom, Doron Cohen Elias, S. Shusterman, Guy M. Cohen, Renee Mo, Will Spratt, Shmuel Saad
Publikováno v:
Journal of Vacuum Science & Technology A. 38:052410
We report on the growth and doping of InAs by atomic layer epitaxy (ALE). The InAs layers were grown using ALE cycles in a metal organic chemical vapor deposition reactor, and Si doping of the films was studied for different SiH4 flow sequences. When
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3751a98d1b84ca5ad6b2e25889ad770
https://doi.org/10.1116/6.0000339
https://doi.org/10.1116/6.0000339
