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pro vyhledávání: '"Shluger, A."'
Publikováno v:
ACS omega 9.9 (2024) 10286-10298
The mechanical properties of Cu-Ti alloys have been characterized extensively through experimental studies. However, a detailed understanding of why the strength of Cu increases after a small fraction of Ti atoms is added to the alloy is still missin
Externí odkaz:
http://arxiv.org/abs/2310.05415
Publikováno v:
In: TMS 2024 153rd Annual Meeting & Exhibition Supplemental Proceedings. TMS 2024. The Minerals, Metals & Materials Series. Springer, Cham
Metallic dopants have the potential to increase the mechanical strength of polycrystalline metals. These elements are expected to aggregate in regions of lower coordination, such as grain boundaries. At the grain boundaries, they can have a beneficia
Externí odkaz:
http://arxiv.org/abs/2310.05416
Simulation of mechanical effects of hydrogen in bicrystalline Cu using DFT and bond order potentials
Publikováno v:
Procedia Structural Integrity 52 (2024) 356-365
Hydrogen embrittlement is a prime cause of several degradation effects in metals. Since grain boundaries (GBs) act efficiently as sinks for hydrogen atoms, H is thought to segregate in these regions, affecting the local formation of dislocations. How
Externí odkaz:
http://arxiv.org/abs/2306.05342
Publikováno v:
ACS Omega, Vol 9, Iss 9, Pp 10286-10298 (2024)
Externí odkaz:
https://doaj.org/article/e187cbe6e1354f9e9c01d6b136d1a3d8
Publikováno v:
Journal of Applied Physics; 8/28/2024, Vol. 136 Issue 8, p1-9, 9p
Autor:
Wentink, Mark, Gaberle, Julian, Aghajanian, Martik, Mostofi, Arash A., Curson, Neil J., Lischner, Johannes, Schofield, Steven R., Shluger, Alexander L., Kenyon, Anthony J.
Publikováno v:
Journal of Physical Chemistry C (2021)
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reve
Externí odkaz:
http://arxiv.org/abs/2110.09808
Simulation of mechanical effects of hydrogen in bicrystalline Cu using DFT and bond order potentials
Publikováno v:
In Procedia Structural Integrity 2024 52:356-365
Autor:
Jack Strand, Alexander L. Shluger
Publikováno v:
Advanced Science, Vol 11, Iss 8, Pp n/a-n/a (2024)
Abstract Understanding defects in amorphous oxide films and heterostructures is vital to improving performance of microelectronic devices, thin‐film transistors, and electrocatalysis. However, to what extent the structure and properties of point de
Externí odkaz:
https://doaj.org/article/009ec7896a1244b598825e307868b835
Publikováno v:
Phys. Rev. B 102, 054205 (2020)
Thin films of amorphous (a)-TiO2 are ubiquitous as photocatalysts, protective coatings, photoanodes and in memory application, where they are exposed to excess electrons and holes. We investigate trapping of excess electrons and holes in the bulk of
Externí odkaz:
http://arxiv.org/abs/2007.09165
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