Zobrazeno 1 - 10
of 213
pro vyhledávání: '"Shlimak, I."'
Publikováno v:
J. Appl. Phys. 126, 194302 (2019)
Broadening of the Raman scattering (RS) spectra was studied in monolayer graphene samples irradiated with various dose of ions followed by annealing of radiation damage at different temperatures. It is shown that the width {\Gamma} (full width at hal
Externí odkaz:
http://arxiv.org/abs/1909.10273
Autor:
Shlimak, I., Zion, E., Butenko, A., Kaganovskii, Yu., Richter, V., Sharoni, A., Kogan, E., Kaveh, M.
Publikováno v:
FlatChem 14, 100084 (2019)
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and l
Externí odkaz:
http://arxiv.org/abs/1907.10472
Autor:
Zion, E., Butenko, A., Kaganovskii, Yu., Richter, V., Wolfson, L., Sharoni, A., Kogan, E., Kaveh, M., Shlimak, I.
Publikováno v:
J. Appl. Phys. 121, 114301 (2017)
The Raman scattering spectra (RS) of two series of monolayer graphene samples irradiated with various doses of C$^{+}$ and Xe$^{+}$ ions were measured after annealing in high vacuum, and in forming gas (95\%Ar+5\%H$_{2}$). It was found that these met
Externí odkaz:
http://arxiv.org/abs/1612.06155
Autor:
Butenko, A., Zion, E., Kaganovskii, Yu., Wolfson, L., Richter, V., Sharoni, A., Kogan, E., Kaveh, M., Shlimak, I.
Publikováno v:
J. Appl. Phys. 120, 044306 (2016)
The influence of long-term ageing (about one year) on the Raman scattering (RS) spectra and the temperature dependence of conductivity has been studied in two series of monolayer graphene samples irradiated by different doses of C$^{+}$ and Xe$^{+}$
Externí odkaz:
http://arxiv.org/abs/1612.06479
Autor:
Shlimak, I., Zion, E., Butenko, A. V., Wolfson, L., Richter, V., Kaganovskii, Yu., Sharoni, A., Haran, A., Naveh, D., Kogan, E., Kaveh, M.
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures, 76, 158 (2016)
Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular
Externí odkaz:
http://arxiv.org/abs/1507.01429
Autor:
Zion, E., Haran, A., Butenko, A. V., Wolfson, L., Kaganovskii, Yu., Havdala, T., Sharoni, A., Naveh, D., Richter, V., Kaveh, M., Kogan, E., Shlimak, I.
Publikováno v:
Graphene, Vol.4, No.3, 45 (2015)
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature
Externí odkaz:
http://arxiv.org/abs/1501.04581
Autor:
Shlimak, I., Haran, A., Zion, E., Havdala, T., Kaganovskii, Yu., Butenko, A. V., Wolfson, L., Richter, V., Naveh, D., Sharoni, A., Kogan, E., Kaveh, M.
Publikováno v:
Phys. Rev. B 91, 045414 (2015)
Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene
Externí odkaz:
http://arxiv.org/abs/1410.3425
Publikováno v:
Phys. Rev. B vol. 88, 155313 (2013)
We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, whil
Externí odkaz:
http://arxiv.org/abs/1307.6260
Publikováno v:
Europhys. Lett. vol. 97, 37002 (2012)
Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the normalized PMR c
Externí odkaz:
http://arxiv.org/abs/1112.1819
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS), High Resolutio
Externí odkaz:
http://arxiv.org/abs/1011.3908