Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Shkolnikov, Y. P."'
Autor:
Gokmen, T., Padmanabhan, Medini, Gunawan, O., Shkolnikov, Y. P., Vakili, K., De Poortere, E. P., Shayegan, M.
Publikováno v:
Phys. Rev. B 78, 233306 (2008)
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies of the tw
Externí odkaz:
http://arxiv.org/abs/0811.3194
Publikováno v:
Physical Review Letter 100, 03660 (2008)
An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the
Externí odkaz:
http://arxiv.org/abs/0707.0153
Autor:
Bishop, N. C., Padmanabhan, M., Vakili, K., Shkolnikov, Y. P., De Poortere, E. P., Shayegan, M.
We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around Landau level filling factor nu = 3/2, demonstrating that the quasiparticles are composite Fermions (CFs) with a valley degree of freedom. By moni
Externí odkaz:
http://arxiv.org/abs/0706.1195
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606158
Publikováno v:
Phys. Rev. Lett. 97, 116803 (2006)
We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on magnetic field o
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606072
Publikováno v:
Appl. Phys. Lett. 89, 172118 (2006).
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over previous
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606071
Publikováno v:
Phys. Rev. Lett. 97, 186 404 (2006).
We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibil
Externí odkaz:
http://arxiv.org/abs/cond-mat/0605692
Publikováno v:
Phys. Rev. Lett. 95, 066809 (2005)
We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505118
Publikováno v:
Phys. Rev. Lett. 94, 176402 (2005)
The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi energy resi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0501151
Publikováno v:
Applied Physics Letters -- October 25, 2004 -- Volume 85, Issue 17, pp. 3766-3768
We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain g
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411741