Zobrazeno 1 - 10 of 462 pro vyhledávání: '"Shizuo FUJITA"'
1
Akademický článek
Natural band alignment of MgO1−xSx alloys
Autor: Yuichi Ota, Kentaro Kaneko, Takeyoshi Onuma, Shizuo Fujita
Publikováno v: AIP Advances, Vol 13, Iss 5, Pp 055304-055304-7 (2023)
We have calculated formation enthalpies, bandgaps, and natural band alignment for MgO1−xSx alloys by first-principles calculation based on density functional theory. The calculated formation enthalpies show that the MgO1−xSx alloys exhibit a larg
Externí odkaz: https://doaj.org/article/67da2f4b229a4fd59635f6b71af3dcc4
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2
Akademický článek
Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD
Autor: Riena Jinno, Kentaro Kaneko, Shizuo Fujita
Publikováno v: AIP Advances, Vol 10, Iss 11, Pp 115013-115013-6 (2020)
The thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates was investigated. A strong correlation was found between thermal stability and film thickness: the more the α-Ga2O3 films maintained the α-phase upon heating at higher ann
Externí odkaz: https://doaj.org/article/9fc26715ac1b4e5499775f4577cd8554
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6
Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition
Autor: Akito Taguchi, Takumi Yamamoto, Kentaro Kaneko, Ken Goto, Takeyoshi Onuma, Tohru Honda, Yoshinao Kumagai, Shizuo Fujita, Tomohiro Yamaguchi
Publikováno v: Japanese Journal of Applied Physics. 62:SF1023
The heteroepitaxial growth of In2O3 on a (0001) α-Al2O3 substrate was carried out using the mist chemical vapor deposition method. The concentrations of In2O3 powder in the source precursor solution varied between 0.025 and 0.250 mol l−1. An incre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3d480d47c0ffa272bdc61e80104ca6c
https://doi.org/10.35848/1347-4065/acbeba
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8
Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition
Autor: Kentaro Kaneko, Kazuyuki Uno, Riena Jinno, Shizuo Fujita
Publikováno v: Journal of Applied Physics. 131:090902
Routes to semi-stable phases of Ga[Formula: see text]O[Formula: see text] are the subject of extended discussions based on the review of growth methods, growth conditions, and precursors in works that report semi-stable phases other than the thermall
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::26450bafeda174fa22f3912233141419
https://doi.org/10.1063/5.0069554
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10
Mist Chemical Vapor Deposition 1
Autor: Shizuo Fujita
Publikováno v: Gallium Oxide ISBN: 9783030371524
This chapter summarizes fundamental issues of corundum-structured gallium oxide (α-Ga2O3), which is obtained by heteroepitaxy on sapphire substrates and is featured by its large bandgap (~5.3 eV), bandgap engineering (3.7 to ~9 eV), and existing cor
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b9d65c3ac5ac9962ce2df9946e473eb
https://doi.org/10.1007/978-3-030-37153-1_12
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