Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Shiyu Numata"'
Autor:
Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023)
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a ${c}$ -axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown vo
Externí odkaz:
https://doaj.org/article/130a499579cf486f97ff60e88658e798
Autor:
Rie Togashi, Ken Goto, Akito Kuramata, Plamen Paskov, Bo Monemar, Shiyu Numata, Shigenobu Yamakoshi, Takayuki Suga, Mayuko Hayashida, Yoshinao Kumagai
Publikováno v:
Japanese Journal of Applied Physics. 55:1202B3
In this work, the first-ever growth of cubic-In2O3 at 1000 °C by halide vapor phase epitaxy (HVPE) was achieved, using gaseous InCl and O2 as precursors in a N2 flow. The growth rates of In2O3 layers on (001) β-Ga2O3 and (0001) sapphire substrates