Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Shiyo Urano"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 297-300 (2022)
This paper investigates bias-dependence of electroluminescence (EL) in an AlGaN/GaN HEMT fabricated on a SiC substrate. The HEMT exhibited a low-intensity reddish EL at the gate electrode at a drain voltage (Vds) of 30 V, which was confirmed with com
Externí odkaz:
https://doaj.org/article/4204a559c40145aa9509b775883f1dc1
Publikováno v:
Applied Physics Express. 14:094008