Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Shiyang Tian"'
Autor:
Shiyang Tian, Tianyi Liu, Jingwei Jiang, Xiting Zhao, Yunpeng Fan, Weimin Zhang, Wuren Ma, Tingting Guo, Weiling Wang, Yingqiu Liu
Publikováno v:
Frontiers in Pharmacology, Vol 15 (2024)
Introduction: According to traditional Chinese veterinary medicine, endometritis is caused by a combination of Qi deficiency, blood stasis, and external evil invasion. Salvia miltiorrhiza is a traditional Chinese medicine that counteracts blood stasi
Externí odkaz:
https://doaj.org/article/228fb9b6b4f94b758d062c693b6d7925
Autor:
Hailong Mu, Shuangshi Liu, Shiyang Tian, Beibei Chen, Zengyuan Liu, Yunpeng Fan, Yingqiu Liu, Wuren Ma, Weimin Zhang, Mingzhe Fu, Xiaoping Song
Publikováno v:
Frontiers in Pharmacology, Vol 13 (2022)
Spermatogenesis directly determines the reproductive capacity of male animals. With the development of society, the increasing pressure on people’s lives and changes in the living environment, male fertility is declining. The leaf of Eucommia ulmoi
Externí odkaz:
https://doaj.org/article/b32aea29007644a0a87e9943f43592ee
Publikováno v:
Journal of Modern Optics. 69:210-218
Publikováno v:
Journal of Modern Optics; Sep/Oct2023, Vol. 70 Issue 16-18, p929-942, 14p
Publikováno v:
Optical Review; Jun2022, Vol. 29 Issue 3, p215-224, 10p
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Using TCAD simulation, we studied channel and source/drain extension doping and length optimization on lateral normally-ON Ga 2 O 3 junction-less power transistor. A novel gradual channel doping technique under the gate is then proposed with low dopi
Autor:
Shiyang Tian
Publikováno v:
IEEE Transactions on Electron Devices. 55:1991-1996
A Monte Carlo model for ion implantation in crystalline SiC is developed, which can be applied to arbitrary polytypes, including but not limited to 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, and 15R-SiC. It is shown that with optimized parameters, a semiempiric
Autor:
Shiyang Tian
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 215:403-412
Fluorine and molecular boron difluoride (BF 2 ) ion implantation into crystalline silicon are simulated with binary-collision-approximation (BCA) based Monte Carlo (MC) model and an extensive comparison with experimental data is made. It is shown tha
Autor:
Shiyang Tian
Publikováno v:
Journal of Applied Physics. 93:5893-5904
In this paper is reported a general and accurate binary-collision-approximation- (BCA-)based Monte Carlo ion implantation model for implants into crystalline silicon. The combination of an improved semiempirical electronic stopping power model and Zi