Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Shiwei Zhuang"'
Autor:
Shiwei Zhuang, Zhimei Liu, Jinyao Wu, Yudan Yao, Zongyang Li, Yanxiang Shen, Bin Yu, Donglu Wu
Publikováno v:
Pharmaceuticals, Vol 17, Iss 6, p 664 (2024)
The circulatory system is a closed conduit system throughout the body and consists of two parts as follows: the cardiovascular system and the lymphatic system. Hematological malignancies usually grow and multiply in the circulatory system, directly o
Externí odkaz:
https://doaj.org/article/b357fb8ddfcf4db29e3eec331b271e02
Autor:
Ziming Zhang, Jingjie Li, Yijian Zhou, Hongyuan Fu, Zixu Zhang, Guojiao Xiang, Yang Zhao, Shiwei Zhuang, Fan Yang, Hui Wang
Publikováno v:
Materials Research, Vol 22, Iss 6 (2020)
In this work, we reported the effects of sputtering power on the structure, optical and electrical properties of InN nanodots prepared on Al2O3 substrate by magnetron sputtering.The results showed that the as-grown InN films exhibited uniform nanodot
Externí odkaz:
https://doaj.org/article/867d581731e14d25b9fc46258d8e972b
Publikováno v:
Optical Materials Express. 13:1249
Blazed gratings play a key role in advanced fields such as metaverse, AR and VR, etc. A good triangular cross section morphology is critical for its performance and applications. To investigate how triangular blazed gratings are evolved from rectangu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c565d2861caf05b3f3081154b4a3ac0
https://doi.org/10.1364/ome.488817
https://doi.org/10.1364/ome.488817
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09519ce078c6e1ee59b05afd1f0af6e1
https://doi.org/10.1109/cstic55103.2022.9856798
https://doi.org/10.1109/cstic55103.2022.9856798
Publikováno v:
Journal of Semiconductors. 43:113101
With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::505398addd3fae2ed1eb568f4fa4ca52
https://doi.org/10.1088/1674-4926/43/11/113101
https://doi.org/10.1088/1674-4926/43/11/113101
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:18788-18793
SiC is commonly used in the field of high temperature, high frequency, high power and radiation-resistant semiconductor devices and ultraviolet photodetectors due to its excellent photoelectric characteristics. Plasma etching is one of the key proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2676d8977e8a493f3f30fce837c261a2
https://doi.org/10.1007/s10854-019-02232-w
https://doi.org/10.1007/s10854-019-02232-w
Autor:
Kaidong Xu, Xinying Shi, Jie Yuan, Ding Guanghui, Hushan Cui, Jiale Tang, Lulu Guan, Yudong Zhang, Shiwei Zhuang, Xingyu Li, Yongjie Hu
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb82825b1db8f82597b8837aaac8f56c
https://doi.org/10.1109/cstic52283.2021.9461495
https://doi.org/10.1109/cstic52283.2021.9461495
Autor:
Jie Yuan, Lu Chen, Xingyu Li, Lulu Guan, Yongjie Hu, Hu Dongdong, Shiwei Zhuang, Liu Xiaobo, Kaidong Xu
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
The plasma characteristics in the coating chamber will affect the uniformity of the film formation, which in turn determines the quality and the production yield of the wafers. To study the plasma characteristics under different pressures in the CVD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d32acadb7c88dc8fdcda4574afb5d21f
https://doi.org/10.1109/cstic52283.2021.9461433
https://doi.org/10.1109/cstic52283.2021.9461433
Autor:
Yongjie Hu, Yudong Zhang, Xingyu Li, Jie Yuan, Lulu Guan, Zhuang Liu, Xiaobo Liu, Dongdong Hu, Kaidong Xu, Shiwei Zhuang
Publikováno v:
Japanese Journal of Applied Physics. 61:066001
The radio frequency (RF) ion source is significant in the industry because of its advantages of easy control and maintenance, low gas consumption, high energy and high-density plasma generation abilities. Unfortunately, the problem of high-density pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a490d6d1c7547c86c5997634c1b277d
https://doi.org/10.35848/1347-4065/ac56fe
https://doi.org/10.35848/1347-4065/ac56fe
Autor:
Yudong Zhang, Yongjie Hu, Kaidong Xu, Jiale Tang, Che Dongchen, Hu Dongdong, Lu Chen, Shiwei Zhuang, Gu Zhiqiang
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
Oxygen as modification gas for the first step, boron trichloride for the etch step was used to sequentially remove GaN from sapphire for 20 cycles. The relationship between oxidation and etching parameters with etching depth of each cycle was investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0d4ec8bf196ca8640a678af63926470
https://doi.org/10.1109/cstic49141.2020.9282402
https://doi.org/10.1109/cstic49141.2020.9282402