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pro vyhledávání: '"Shiwaya, Yoichi"'
Autor:
Shiwaya, Yoichi, Omura, Yasuhisa
Publikováno v:
関西大学工学研究報告 = Technology reports of the Kansai University. 49:11-18
This paper proposes a compact equivalent-circuit model for the snap-back phenomenon in ultra-thin SOI MOSFET's. The model can be used in simulations of I/O circuits with ESD-protection devices. The model is more simple than past models, but it succes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::6ea5eaef5646d713111e54b57279b715
https://kansai-u.repo.nii.ac.jp/records/11792
https://kansai-u.repo.nii.ac.jp/records/11792
