Semiconductor - Ferromagnetic Insulator - Superconductor Nanowires: Stray Field and Exchange Field

Autor: Sabbir A. Khan, Thomas Kanne, Yu Liu, Christian Koch, Rawa Tanta, Sean Hart, Jordi Arbiol, Peter Krogstrup, Zheng Cui, Sara Martí-Sánchez, Martin Espiñeira Cachaza, Charles Marcus, Kathryn A. Moler, Shivendra Upadhyay, S. Vaitiekėnas

Publikováno v: Nano Letters
Recercat. Dipósit de la Recerca de Catalunya
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Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Liu, Y, Vaitiekenas, S, Marti-Sanchez, S, Koch, C, Hart, S, Cui, Z, Kanne, T, Khan, S A, Tanta, R, Upadhyay, S, Cachaza, M E, Marcus, C M, Arbiol, J, Moler, K A & Krogstrup, P 2020, ' Semiconductor-Ferromagnetic Insulator-Superconductor Nanowires : Stray Field and Exchange Field ', Nano Letters, vol. 20, no. 1, pp. 456-462 . https://doi.org/10.1021/acs.nanolett.9b04187

Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of semiconductor - ferromag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ffd2dd547b2242fe30828fec48a1bc2
http://arxiv.org/abs/1910.03364

Doping incorporation paths in catalyst-free Be-doped GaAs nanowires

Autor: Anna Fontcuberta i Morral, Claus B. Sørensen, Jason A. Röhr, Carlo Colombo, Alberto Casadei, Shivendra Upadhyay, Thibaud Ruelle, Jesper Nygård, Peter Krogstrup, Martin Heiss

Publikováno v: Applied Physics Letters

The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa85ffadba5a520af78ec0414ebaeb7a

Low temperature transport in p-doped InAs nanowires

Autor: Thomas Sand Jespersen, Jesper Nygård, Shivendra Upadhyay, M. H. Madsen, Peter Krogstrup

Publikováno v: Applied Physics Letters. 103:162104

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries ex

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::348409a62699c2282814f633654db909
https://doi.org/10.1063/1.4825275

Comparison of gate geometries for tunable, local barriers in InAs nanowires

Autor: Attila Márton, Thomas Sand Jespersen, Peter D. Nissen, Jesper Nygård, Morten Hannibal Madsen, Szabolcs Csonka, Shivendra Upadhyay, Kasper Grove-Rasmussen

Publikováno v: Journal of Applied Physics

We report measurements and analysis of gate-induced electrostatic barriers for electron transport in InAs nanowires. Three types of local gates are analyzed; narrow gates (50−100 nm) located on top of or below the nanowire, and wide gates overlappi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::827027090318b5784caca739132c16f7
https://doi.org/10.1063/1.4759248