Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Shivashankar Vangala"'
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Abstract Wafer scale (2”) BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO
Externí odkaz:
https://doaj.org/article/d85430b4d14b448c9a0b4d8720cdb2fa
Publikováno v:
Nonlinear Frequency Generation and Conversion: Materials and Devices XXII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15444ab09ff7eacc783b54218e86f1e
https://doi.org/10.1117/12.2651400
https://doi.org/10.1117/12.2651400
Publikováno v:
2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c48e66d18f04cee84693628f82d441af
https://doi.org/10.1109/rapid54472.2022.9911580
https://doi.org/10.1109/rapid54472.2022.9911580
Autor:
Kevin D. Leedy, Junpeng Guo, Evan M. Smith, Joshua R. Hendrickson, Shivashankar Vangala, Justin W. Cleary
Publikováno v:
MRS Communications. 10:573-578
Indium tin oxide (ITO) has become a very useful plasmonic and nonlinear optical material because of its highly tunable electrical and optical properties and strong optical nonlinearity. In this work, the authors conducted detailed fabrication process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49fe5411ed8981a6d8d27342b5c3f18e
https://doi.org/10.1557/mrc.2020.62
https://doi.org/10.1557/mrc.2020.62
Autor:
Dylan J. Morden, Evan M. Smith, Ivan Avrutsky, Joshua R. Hendrickson, Shivashankar Vangala, Imad H. Agha
Publikováno v:
Photonic and Phononic Properties of Engineered Nanostructures XII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81703735779d546deeca6d00366cb96a
https://doi.org/10.1117/12.2610149
https://doi.org/10.1117/12.2610149
Autor:
Justin W. Cleary, Junpeng Guo, Joshua R. Hendrickson, Andrea Alù, Evan M. Smith, Hoyeong Kwon, Shivashankar Vangala, Chandriker Kavir Dass
Publikováno v:
ACS Photonics. 7:174-179
With the ability to confine light to subwavelength volumes, plasmonic nanostructures and metamaterials have proven to be powerful tools for nanophotonic applications. For nonlinear processes, however, the small dimensions of nanophotonic devices can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72e8b0c27f17c33f7ce580660fcd57f3
https://doi.org/10.1021/acsphotonics.9b01350
https://doi.org/10.1021/acsphotonics.9b01350
Infrared surface-plasmon-resonance attenuator for broadly controllable effective radiant temperature
Autor:
R.E. Peale, P.N. Figueiredo, Justin R. Phelps, Kevin C. Chan, Reza Abdolvand, Evan M. Smith, Shivashankar Vangala
Publikováno v:
Infrared Physics & Technology. 125:104253
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c1f5bf1d46aaf9e0739f28a96b4f6d
https://doi.org/10.1016/j.infrared.2022.104253
https://doi.org/10.1016/j.infrared.2022.104253
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
We investigate erbium-doped indium tin oxide and report increases to the resistivity and epsilon-near-zero wavelength with increased erbium concentration. These films are being investigated for plasmonics, second harmonic generation, perfect absorpti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb781519efd85c7c21951932866a3d42
https://doi.org/10.1109/rapid51799.2021.9521382
https://doi.org/10.1109/rapid51799.2021.9521382
Publikováno v:
Journal of Crystal Growth. 522:230-234
Zinc selenide is attractive for numerous optical applications in the mid and longwave infrared from solid state lasers to non-linear optical frequency conversion. Its use has been limited by the availability of single crystal and epitaxial materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02952ebcc6a4d56796a6f922b8f3a583
https://doi.org/10.1016/j.jcrysgro.2019.06.032
https://doi.org/10.1016/j.jcrysgro.2019.06.032
Publikováno v:
Journal of Crystal Growth. 522:210-213
We report recent results on heteroepitaxy of ZnSe on GaAs, GaSe on GaP, GaAs and GaN substrates, and GaAsxP1−x ternaries on GaAs, as well growths of OPGaP, OPGaAsP and OPZnSe on orientation-patterned (OP) GaAs templates. ZnSe and GaSe were chosen f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90511acd930583ef067533295499c30d
https://doi.org/10.1016/j.jcrysgro.2019.06.028
https://doi.org/10.1016/j.jcrysgro.2019.06.028