Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Shivashankar, SA"'
Publikováno v:
In Journal of Magnetism and Magnetic Materials 1 November 2018 465:590-597
Publikováno v:
IndraStra Global.
Green phosphors based on terbium doped GdOOH and Gd2O3 powders are prepared through a rapid microwave assisted solution based method using ethanol as a solvent and without using any surfactants. The as-prepared Tb3+:GdOOH powders are crystalline and
Publikováno v:
IndraStra Global.
Nanocrystalline zinc ferrite (ZFO) has been synthesized from metal acetylacetonates by microwave irradiation for 5 min in the presence of a surfactant. The as-prepared material is ZFO and has been subjected in air to conventional furnace annealing an
Autor:
Mallik, Awadesh K, Binu, SR, Satapathy, LN, Narayana, Chandrabhas, Seikh, Md Motin, Shivashankar, SA, Biswas, SK
Publikováno v:
IndraStra Global.
Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high grow
Publikováno v:
IndraStra Global.
Polycrystalline diamond coatings have been grown on unpolished side of Si(100) wafers by hot filament chemical vapour deposition process. The morphology of the grown coatings has been varied from cauliflower morphology to faceted morphology by manipu
Publikováno v:
IndraStra Global.
Publikováno v:
IndraStra Global.
The title compound, [Er(C5H7O2)(3)(C12H8N2)], is a mixed-ligand metal-organic precursor for chemical vapour deposition, with the Er atom being eight-coordinate. The coordination polyhedron, described as a distorted square antiprism, is formed by thre
Autor:
Sahana, MB, Shivashankar, SA
Thin films of vanadium oxides were grown on fused quartz by metalorganic chemical vapor deposition using vanadyl acetylacetonate as the precursor. Growth at temperatures \geq560 °C results in composites of strongly (00l)-oriented $V_{2}O_{5}$ and $V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______182::adaa7be68a68e5efd62142ec38a0b584
http://eprints.iisc.ernet.in/2312/
http://eprints.iisc.ernet.in/2312/
Publikováno v:
IndraStra Global.
Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage ($V_F_B$) and charge trapping and detrapping causes hysterectic changes on voltage cycling. Both phenomena affe
Publikováno v:
IndraStra Global.
We report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualita