Zobrazeno 1 - 10
of 322
pro vyhledávání: '"Shivaprasad, S. M."'
We study the native charge compensation effect in Mg doped GaN nanorods (NRs), grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE), using Raman, photoluminescence (PL) and X-ray photoelectron spectroscopies (XPS). The XPS valence band analysis sh
Externí odkaz:
http://arxiv.org/abs/1807.01121
The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and atomic force
Externí odkaz:
http://arxiv.org/abs/1801.02374
We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk and at non-polar (10$\overline{1}$0) surface of wurtzite Gallium Nitrid
Externí odkaz:
http://arxiv.org/abs/1710.05670
Publikováno v:
Journal of Applied Physics 123 (13), 135303 (2018)
We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped gallium nitride (GaN) nanorods (NRs) using electron microscopy and \textit{first-principles} Density Functional Theory calculations. Experimentally, we find the M
Externí odkaz:
http://arxiv.org/abs/1709.04479
Publikováno v:
Phys. Rev. Applied 11, 014027 (2019)
We uncover the origin of blue luminescence (BL) peak in Mg doped GaN thin film using a combination of experimental X-ray absorption near edge spectroscopy (XANES), first-principles calculations based on density functional theory and full multiple sca
Externí odkaz:
http://arxiv.org/abs/1708.04036
Publikováno v:
Journal of Applied Physics 123, 014302 (2018)
We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth using PA-MBE and complementing it by \textit{first-principles} calcul
Externí odkaz:
http://arxiv.org/abs/1708.03094
Publikováno v:
In Materials Research Bulletin October 2021 142
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth of Mg dope
Externí odkaz:
http://arxiv.org/abs/1611.10263
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are investigated. Magneto-
Externí odkaz:
http://arxiv.org/abs/1411.0366
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis oriented wedge-sh
Externí odkaz:
http://arxiv.org/abs/1410.1295