Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shiuh-Luen Wang"'
Publikováno v:
Solid-State Electronics. 54:579-581
In this paper, a method is proposed to enhance the self-aligned split-gate flash cell performance. Utilizing the different oxidation rate between silicon substrate and the heavily-doped poly-silicon sidewall of the floating gate, a rapid-thermal-oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf1eb08810afe42920b9477e86441eb0
https://doi.org/10.1016/j.sse.2009.12.023
https://doi.org/10.1016/j.sse.2009.12.023
Autor:
M. Hackel, Shiuh-Luen Wang, Takahiro Iizuka, Christoph Jungemann, R. Thoma, Philippe Dollfus, Neil Goldsman, F. Dessenne, Xiaolin Wang, Ting-Wei Tang, Kenji Taniguchi, Karl Hess, Yoshinari Kamakura, Masaaki Tomizawa, C. Maziar, H.J. Peifer, S. Ramaswamy, P. Hesto, K. Tomizawa, Akira Yoshii, Chiang-Sheng Yao, Nobuyuki Sano, C. Fiegna, Rossella Brunetti, Tatsuya Kunikiyo, Chihiro Hamaguchi, J. L. Thobel, Antonio Abramo, R. Fauquembergue, R. Castagné, Siegfried Selberherr, Steven E. Laux, Massimo V. Fischetti, K. Hennacy, L. Baudry, P.G. Scrobohaci, Hongchin Lin, M. Charef, Hans Kosina, J.M. Higman, M. Takenaka, H. Mizuno, P. D. Yoder, S. Galdin, W.L. Engl, T. Vogelsang, Robert W. Dutton
Publikováno v:
IEEE Transactions on Electron Devices. 41:1646-1654
In this work we have undertaken a comparison of several previously reported computer codes which solve the semiclassical Boltzmann equation for electron transport in silicon. Most of the codes are based on the Monte Carlo particle technique, and have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7451c88a226c058839e354546dc54080
https://doi.org/10.1109/16.310119
https://doi.org/10.1109/16.310119
Publikováno v:
Solid-State Electronics. 36:833-841
RELY, a new device reliability simulator, has been developed. RELY predicts hot-electron induced MOSFET degradation that occurs over the device lifetime. Using solutions to the Poisson and continuity equations as input, which were calculated before t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c9f938b78137a4a1c65e9a9ccf45f13
https://doi.org/10.1016/0038-1101(93)90005-b
https://doi.org/10.1016/0038-1101(93)90005-b
Publikováno v:
Journal of Applied Physics. 71:1815-1822
Values for impact ionization coefficients are calculated from the electron momentum distribution function. The distribution function is found by solving the Boltzmann transport equation. The solution is obtained by combining a third‐order Legendre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c21beffe3fb98cb1cd82b13f84476e3
https://doi.org/10.1063/1.351188
https://doi.org/10.1063/1.351188
Publikováno v:
IEEE Transactions on Electron Devices. 39:1821-1828
An improved extrapolation technique for obtaining space-dependent electron energy distribution functions by combining energy transport simulations with solutions to the homogeneous-field Boltzmann equation is presented. The accuracy of the method dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe92caed4ae42a20fcc28c5be670b74
https://doi.org/10.1109/16.144670
https://doi.org/10.1109/16.144670
Publikováno v:
International Technical Digest on Electron Devices.
The authors describe a novel technique, which combines the attributes of the energy transport and Monte Carlo (ET-MC) methods, for determining MOSFET gate current that arises from electron heating in the device. This method is based upon a non-Maxwel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cad52d968779f5e3fe5d176b7e1cadcc
https://doi.org/10.1109/iedm.1990.237071
https://doi.org/10.1109/iedm.1990.237071
Publikováno v:
Journal of Semiconductors; Jun2010, Vol. 31 Issue 6, p064012-064015, 4p
Conference
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