Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Shiuan Chang"'
Publikováno v:
Batteries, Vol 3, Iss 4, p 36 (2017)
In this study, boron, a metalloid element commonly used in semiconductor applications, was added in a V-containing Zr-based AB2 metal hydride alloy. In general, as the boron content in the alloy increased, the high-rate dischargeability, surface exch
Externí odkaz:
https://doaj.org/article/a0e19f1a88cd436a94140bc0bc7a5854
Publikováno v:
Batteries, Vol 3, Iss 3, p 26 (2017)
A combination of analytic tools and electrochemical testing was employed to study the contributions of Palladium (Pd) in a Zr-based AB2 metal hydride alloy (Ti12Zr22.8V10 Cr7.5Mn8.1Co7Ni32.2Al0.4). Pd enters the A-site of both the C14 and C15 Laves p
Externí odkaz:
https://doaj.org/article/4044235ed5a946279ad02c0939beb043
Publikováno v:
Batteries, Vol 3, Iss 3, p 27 (2017)
C14 Laves phase alloys play a significant role in improving the performance of nickel/metal hydride batteries, which currently dominate the 1.2 V consumer-type rechargeable battery market and those for hybrid electric vehicles. In the current study,
Externí odkaz:
https://doaj.org/article/063751a7cf2b43d281e9fff78b5436b1
Publikováno v:
Batteries, Vol 3, Iss 3, p 24 (2017)
Both the patents issued and applications filed in China regarding nickel/metal hydride (Ni/MH) battery technology are reviewed in the article. Selective works from 39 battery manufactures, 9 metal hydride alloy suppliers, 13 Ni(OH)2 suppliers, 20 har
Externí odkaz:
https://doaj.org/article/12b6eb5f2e39484c997f2753282f1672
Publikováno v:
Batteries, Vol 3, Iss 3, p 25 (2017)
Patent applications in the field of nickel/metal hydride (Ni/MH) batteries are reviewed to provide a solid technology background and directions for future developments. As the fourth review article in the series of investigations into intellectual pr
Externí odkaz:
https://doaj.org/article/249cd7496d1e4a8fb0d698712a2c3a9e
Autor:
Rajakumaran, Ramachandran, Musuvadhi Babulal, Sivakumar, Ming Chen, Shen, Sukanya, Ramaraj, Karthik, Raj, Muhammed Shafi, P., Shim, Jae-Jin, Yo-Shiuan, Chang
Publikováno v:
In Applied Surface Science 15 December 2021 569
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947
Publikováno v:
IEEE Transactions on Plasma Science. 49:15-20
In this work, the impacts of oxygen (O2) plasma treatment on the performance and negative bias temperature instability (NBTI) of tunnel thin-film transistors (T-TFTs) with polycrystalline-silicon channel material are studied. After O2 plasma treatmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e7202ea8922c6cbe2138a88d736e82
https://doi.org/10.1109/tps.2020.3015729
https://doi.org/10.1109/tps.2020.3015729
Autor:
Shen-Ming Luo, Cai-Jia Tsai, Ming-Jhe Li, Ting-Hsuan Chang, Jiun-Hung Lin, Yan-Shiuan Chang, William Cheng-Yu Ma, Po-Jen Chen, Jhe-Wei Jhu
Publikováno v:
IEEE Transactions on Plasma Science. 49:26-32
The impacts of ammonia gas (NH3) plasma treatment on the performance and positive gate bias stress (PGBS) of polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) are studied. A −0.785-V threshold voltage ( $V_{\mathrm {TH}}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03bd537feb3add10017e48933782362
https://doi.org/10.1109/tps.2020.3010483
https://doi.org/10.1109/tps.2020.3010483
Publikováno v:
Machine Learning. 109:1749-1778
Existing deep active learning algorithms achieve impressive sampling efficiency on natural language processing tasks. However, they exhibit several weaknesses in practice, including (a) inability to use uncertainty sampling with black-box models, (b)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6bb3e81a1f14db9fe85a08406b086f3
https://doi.org/10.1007/s10994-020-05897-1
https://doi.org/10.1007/s10994-020-05897-1