Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Shiuan Chang"'
Publikováno v:
Batteries, Vol 3, Iss 4, p 36 (2017)
In this study, boron, a metalloid element commonly used in semiconductor applications, was added in a V-containing Zr-based AB2 metal hydride alloy. In general, as the boron content in the alloy increased, the high-rate dischargeability, surface exch
Externí odkaz:
https://doaj.org/article/a0e19f1a88cd436a94140bc0bc7a5854
Publikováno v:
Batteries, Vol 3, Iss 3, p 26 (2017)
A combination of analytic tools and electrochemical testing was employed to study the contributions of Palladium (Pd) in a Zr-based AB2 metal hydride alloy (Ti12Zr22.8V10 Cr7.5Mn8.1Co7Ni32.2Al0.4). Pd enters the A-site of both the C14 and C15 Laves p
Externí odkaz:
https://doaj.org/article/4044235ed5a946279ad02c0939beb043
Publikováno v:
Batteries, Vol 3, Iss 3, p 27 (2017)
C14 Laves phase alloys play a significant role in improving the performance of nickel/metal hydride batteries, which currently dominate the 1.2 V consumer-type rechargeable battery market and those for hybrid electric vehicles. In the current study,
Externí odkaz:
https://doaj.org/article/063751a7cf2b43d281e9fff78b5436b1
Publikováno v:
Batteries, Vol 3, Iss 3, p 24 (2017)
Both the patents issued and applications filed in China regarding nickel/metal hydride (Ni/MH) battery technology are reviewed in the article. Selective works from 39 battery manufactures, 9 metal hydride alloy suppliers, 13 Ni(OH)2 suppliers, 20 har
Externí odkaz:
https://doaj.org/article/12b6eb5f2e39484c997f2753282f1672
Publikováno v:
Batteries, Vol 3, Iss 3, p 25 (2017)
Patent applications in the field of nickel/metal hydride (Ni/MH) batteries are reviewed to provide a solid technology background and directions for future developments. As the fourth review article in the series of investigations into intellectual pr
Externí odkaz:
https://doaj.org/article/249cd7496d1e4a8fb0d698712a2c3a9e
Autor:
Rajakumaran, Ramachandran, Musuvadhi Babulal, Sivakumar, Ming Chen, Shen, Sukanya, Ramaraj, Karthik, Raj, Muhammed Shafi, P., Shim, Jae-Jin, Yo-Shiuan, Chang
Publikováno v:
In Applied Surface Science 15 December 2021 569
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Publikováno v:
IEEE Transactions on Plasma Science. 49:15-20
In this work, the impacts of oxygen (O2) plasma treatment on the performance and negative bias temperature instability (NBTI) of tunnel thin-film transistors (T-TFTs) with polycrystalline-silicon channel material are studied. After O2 plasma treatmen
Autor:
Shen-Ming Luo, Cai-Jia Tsai, Ming-Jhe Li, Ting-Hsuan Chang, Jiun-Hung Lin, Yan-Shiuan Chang, William Cheng-Yu Ma, Po-Jen Chen, Jhe-Wei Jhu
Publikováno v:
IEEE Transactions on Plasma Science. 49:26-32
The impacts of ammonia gas (NH3) plasma treatment on the performance and positive gate bias stress (PGBS) of polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) are studied. A −0.785-V threshold voltage ( $V_{\mathrm {TH}}$
Autor:
Haw-Shiuan Chang, Mccallum, Andrew
Publikováno v:
Web of Science